Circuit tolerance measure method in field of semiconductor design simulation

Abstract

The invention provides a modeling method of mismatch targeting metal-oxide-semiconductor field effect transistors in the field of semiconductor design simulation. The modeling method comprises the following steps of: testing the characteristics of a simulated device and establishing a standard model of the simulated device; testing the mismatch characteristics of the simulated device; adding corresponding formulas on the basis of the standard model and establishing another model containing the mismatch information of the simulated device; and judging whether a deference value of the mismatch model and the standard model is identical with a measured value or not. The invention provides the modeling method of the mismatch of devices in the field of semiconductor design simulation; and in circuit simulation, a model obtained by the method can precisely judge whether the mismatched tolerance of a circuit is in a required range or not and can achieve shorter time consumption and higher efficiency in comparison with the process of a Monte Carlo simulation method.

Description

technical field [0001] The invention relates to the field of semiconductor design SPICE simulation and modeling, and in particular to a modeling method for device mismatch in the field of semiconductor design simulation. Background technique [0002] Modern integrated circuits are often composed of more than one million transistors. Simulation methods for simulating complex integrated circuit systems are an essential part of the process of designing and producing integrated circuits. Without such simulation systems and methods, integrated circuits The design and production costs will become very high. In order to design an integrated circuit, the first step is the functional description and specification description of the integrated circuit, and then the circuit diagram is proposed on this basis. Generally, the performance of the circuit diagram is checked using a circuit simulator (Circuit Simulator) as an aid. If it is determined that the circuit diagram cannot meet the ...

AI Technical Summary

Problems solved by technology

The disadvantage of the traditional Monte Carlo method applied to mismatch modeling and mismatch circuit simulation method is that in the implementation process, it needs to repeat the calculation many times to obtain higher accuracy.

When modeling, multiple iterations are required to obtain the parameter values ​​of the final mathematical model. If the calculation is repeated many times in each iteration, it will be very time-consuming and a great burden on modeling. For large-scale The simulation of the mismatch tolerance of the circuit, because the scale of the circuit becomes larger, a single simulation takes a long time, if the Monte Carlo method is applied at this time, the simulation time will be greatly increased

Therefore, the traditional Monte Carlo method takes a lot of time and is less efficient

In addition, the traditional Monte Carlo method is a method based on statistics, and most of its values ​​are not the worst case in practice. This method of value selection is not good for checking the actual tolerance of the circuit, because the circuit Failure is most likely to occur when the actual worst case occurs

As mentioned above, existing methods cannot well meet the needs of verifying integrated circuit design

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