Gate drive circuit

Abstract

The invention discloses a gate driving circuit, which is suitable for receiving an external gate power supply voltage and an external control signal, generating a plurality of internal shift data signal groups in sequence, and The internal shift data signal group outputs a plurality of gate signals in sequence, and each internal shift data signal group includes a plurality of sequentially generated internal shift data signals; and the gate driving circuit includes a plurality of gate signal generating modules, And each gate signal generating module includes a voltage modulation circuit and a gate output buffer circuit. The voltage modulation circuit uses the corresponding ones in the internal shift data signal group and the external control signal to modulate the external gate power supply voltage to obtain a modulated voltage signal; the gate output buffer circuit includes a plurality of output stages coupled in parallel, these output stages are sequentially enabled to output modulated voltage signals to obtain some of the above gate signals. The gate driving circuit of the embodiment of the present invention can effectively suppress the occurrence of large peak current, avoid unnecessary power loss and / or avoid circuit burnout.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a gate drive circuit, which is suitable for application in active matrix displays. Background technique [0002] see figure 1 , which is a structural block diagram of an existing active matrix display. Such as figure 1 As shown, the active matrix display 100 includes a display substrate 110, a printed circuit board 130, a plurality of source driver integrated circuits (not shown) electrically coupled between the display panel 110 and the printed circuit board 130, and includes a plurality of The gate driving circuits of the gate driving integrated circuits Y1 and Y2 are cascadedly coupled. Wherein, a thin film transistor array (not shown) is formed on the display substrate 110, and the gate driving integrated circuits Y1 and Y2 in the gate driving circuit are electrically coupled to the thin film transistor array of the display substrate 110 as switches for each thin film tra...

AI Technical Summary

Problems solved by technology

[0003] However, in the process of modulation of the gate supply voltage VGH into the modulated voltage signal VGG, since the cascade-coupled gate drive integrated circuits Y1 and Y2 use the modulated voltage signal VGG provided by the same pulse width modulation circuit 132 as the power supply Voltage, and the potential of the modulated voltage signal VGG changes periodically, when the potential of the modulated voltage signal VGG is cut from the gate power supply voltage VGH to a lower level and then pulled back to the gate power supply voltage VGH, the pulse width modulation A discharge current formed in the transformer circuit 132 will increase sharply and a large peak current (high peak current) will appear, resulting in a large power loss and even burning the circuit

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