Plasma processing equipment and substrate support plate thereof

Abstract

The invention discloses a substrate support plate which is used for plasma processing equipment and comprises a support plate body, wherein the support plate body is provided with a plurality of installation cavities, and a substrate is supported by support parts in the installation cavities; the position of the top of the support part in each installation cavity sequentially ascends from the central position of the support plate body to a peripheral position. The invention also discloses the plasma processing equipment comprising the substrate support plate. When the gas output from a gas hole at the central position of a gas distribution device reaches a corresponding substrate surface, the passed distance is relatively longer, so that the diffusion degree is relatively higher; when thegas output from the gas hole at the peripheral position of the gas distribution device reaches the corresponding substrate surface, the passed distance is relatively shorter, so that the diffusion degree is relatively lower. The concentration difference between the gases output from the gas holes at different positions can be effectively counteracted, so that the gas concentration on the substrate surfaces of different positions on the substrate support plate can be more homogeneous.

Description

technical field [0001] The invention relates to the technical field of microelectronics, in particular to a substrate carrier plate used for plasma processing equipment. The present invention also relates to a plasma processing apparatus comprising the above-mentioned substrate carrier. Background technique [0002] Plasma processing equipment is widely used in the field of microelectronics technology. [0003] Please refer to figure 1 , figure 1 It is a structural schematic diagram of a plasma processing equipment and its substrate carrier. [0004] Plasma processing equipment 1 usually includes a housing 11, in which there is a reaction chamber 17, and the top and bottom of the reaction chamber 17 are respectively provided with an inlet passage 14 and an exhaust passage 15 for supplying air to the reaction chamber 17. Input and exhaust gas. The gas entering from the gas inlet channel 14 needs to pass through the gas distribution device 13 and output from the gas holes...

AI Technical Summary

Problems solved by technology

[0006] Since the gas enters from the gas inlet channel 14, at the top of the gas distribution device 13, the gas concentration in the central part is higher than that in the peripheral part; The difference can be significantly reduced, but the difference in the above concentration is difficult to completely eliminate

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