Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for repairing cadmium-arsenic polluted soil by utilizing bidens pilosa

A cloverleaf and compound pollution technology, applied in the field of phytoremediation of polluted environments, can solve problems such as slow research progress and limited rejection plants, and achieve the effects of strong operability, repairing cadmium pollution, and not causing secondary pollution

Inactive Publication Date: 2010-06-23
SHENYANG INST OF APPL ECOLOGY CHINESE ACAD OF SCI
View PDF0 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since the rejection plants only stabilize heavy metals in the polluted site, their remediation of the contaminated soil is not as thorough as that of the hyperaccumulator plants, so their research progress is relatively slow, and the discovery of the rejection plants is also relatively limited (Reference 8: Wei Shuhe, Zhou Qixing, Liu Rui. Utilization of weed resources in remediation of heavy metal contaminated soil[J]. Journal of Natural Resources. 2005, 20: 432-440)

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for repairing cadmium-arsenic polluted soil by utilizing bidens pilosa
  • Method for repairing cadmium-arsenic polluted soil by utilizing bidens pilosa
  • Method for repairing cadmium-arsenic polluted soil by utilizing bidens pilosa

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0013] The growth response of P. trifoliate under pollution conditions and the characteristics of arsenic absorption and accumulation are further explained in the following figure as a cadmium hyperaccumulator and arsenic rejection plant, which has certain utilization value for the control of arsenic pollution.

[0014]The test site is located in the Shenyang Ecological Experiment Station of the Chinese Academy of Sciences. The geographical location is 123°41′ east longitude, 41°31′ north latitude, and the altitude is about 50m. -164d, the annual precipitation is 650-700mm. The potting test soil was collected from the top soil (0-20cm) of the station. The soil type was meadow brown soil. Its physical and chemical properties were pH 6.56, organic matter 12.26g / kg, total N 0.91g / kg, total P 0.4g / kg, Total K 183g / kg, total Cd 0.17mg / kg, total Cu 32.9mg / kg, total Zn 28.1mg / kg, total Pb 11.1mg / kg, total As 2.1mg / kg.

[0015] After the test soil is air-dried and passed through a 4m...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention belongs to the polluted environment plant repairing technical field and in particular relates to a method for repairing cadmium-arsenic polluted soil by utilizing bidens pilosa. Bidens pilosa is planted on cadmium-arsenic polluted soil, thus realizing the aim of removing excessive cadmium-arsenic combined pollutant in soil. The invention utilizes that bidens pilosa has the cadmium hyper enrichment plant characteristic and arsenic rejection plant characteristic and is cadmium hyper enrichment and arsenic rejection plant, thus showing that the invention has strong application potential on plant repairing of cadmium-arsenic polluted soil. The invention has the advantages that work amount is less, physical and chemical properties of soil are not destroyed, no secondary pollution is produced, and water and soil can be preserved and environment can be beautified.

Description

technical field [0001] The invention belongs to the technical field of phytoremediation of polluted environment, and in particular relates to a method for remediating cadmium-arsenic compound polluted soil by using ghost needle grass. Background technique [0002] Cadmium (Cd) and arsenic (As) are toxic pollutants widely distributed in the environment. Due to the discharge of industrial waste and unreasonable agricultural management measures, the Cd-As compound pollution in farmland soil is becoming more and more serious. Cd and As in soil environmental pollution come from a wide range of sources. In addition to natural factors, they mainly come from pesticides, pesticides, urban domestic sludge, and wastewater, waste gas, and waste residues discharged from mining, smelting, chemical, and leather industries (Document 1 : McGrath S P, Zhao F J, Lombi E.Plant andrhizosphere processes involved in phytoremediation of metal-contaminated soils[J].Plant Soil, 2001, 232:207-214. Li...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B09C1/00B09C1/10
Inventor 孙约兵周启星任丽萍刘维涛徐志强
Owner SHENYANG INST OF APPL ECOLOGY CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com