Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Power semiconductor module

A power semiconductor and integrated technology, which is applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, electric solid-state devices, etc., can solve problems such as increasing assembly man-hours, reducing production efficiency, and hidden dangers

Inactive Publication Date: 2010-06-23
LSIS CO LTD
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The above-mentioned wire connection structure makes the structure of the DBC more complex, and reduces production efficiency due to increased assembly man-hours, becoming a potential adverse hidden danger

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Power semiconductor module
  • Power semiconductor module
  • Power semiconductor module

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0012] Below, the embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the process, the size or shape of structural elements shown in the drawings will be exaggerated for clarity and convenience of description. In addition, the terms specifically defined in consideration of the structure and operation of the present invention may vary depending on the user's or application's intention or practice. The definitions of the above terms should be determined based on the contents of the entire specification.

[0013] figure 1 It is a schematic structural diagram of the power semiconductor module of the present invention; figure 2 It is a schematic diagram of the appearance of the integrated terminal unit of the present invention; image 3 for figure 2 assembly diagram. The following will be combined Figure 1 to Figure 3 , the structure and function of the power semiconductor module of the present invention will be ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A power semiconductor module is disclosed, comprising: a substrate mounted with a power semiconductor device and formed with a pattern; and an integrated terminal unit integrally assembled with a power terminal for applying power to the substrate and a body in which a signal terminal for inputting a signal to or outputting the signal from the substrate is made of an insulated resin material, wherein the integrated terminal unit can be mounted to the substrate to allow the power terminal and the signal terminal to be simultaneously connected to the substrate.

Description

technical field [0001] The present invention relates to a power semiconductor module, which is a component that integrates power supply terminals for supplying power and signal terminals for input / output signals, and can be mounted on a substrate. Background technique [0002] Power semiconductor modules are used in inverters, converters and uninterruptible power supplies, etc., and refer to power modules used for motor control, switching and power supply. [0003] In general, when manufacturing a power semiconductor module composed of IGBT, power MOSFET, or bipolar transistor, the bonding process of each material is as follows: bonding transistor elements and diode elements to a DBC (direct bonded copper: direct bonded copper) substrate After connecting with wires, the power supply terminals and signal terminals connected to the outside are bonded to the above-mentioned board. [0004] Here, the power terminals and signal terminals in the prior art are generally independen...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L23/48H01L23/12H01L23/28
CPCH01L2924/0002H01L23/49811H01L23/3735H01L2924/13091H01L2924/13055H01L25/072H01L2924/00H01L21/56H01L23/48
Inventor 李秉昊
Owner LSIS CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com