Complementary type SCR (semiconductor control rectifier) structure triggered by help of NPN (negative-positive-negative) bipolar-junction transistors

Abstract

The invention discloses a complementary type SCR (semiconductor control rectifier) structure triggered by the help of NPN (negative-positive-negative) bipolar-junction transistors, which comprises a first controllable silicon, a second controllable silicon and a third controllable silicon, wherein the first controllable silicon is composed of two bipolar transistors and used for ESD (electro-static discharge) protection between a chip pin to be protected and a positive power line; the second controllable silicon is composed of another two dipolar transistors and used for the ESD protection between the chip pin to be protected and a negative power line; and the third controllable silicon is composed of one bipolar transistor in the first controllable silicon and one bipolar transistor in the second controllable silicon and used for the ESD protection between the positive power line and the negative power line. The invention reduces trigger voltage of each controllable silicon by adopting the NPN bipolar transistors, and is especially suitable for the ESD protection on a chip of a deep submicrometer processing integrated circuit.

Description

technical field [0001] The invention belongs to the field of integrated circuits, in particular to a complementary SCR structure used to improve the reliability of integrated circuit ESD protection. Background technique [0002] The phenomenon of electrostatic discharge (ESD) in nature is the most important reliability problem that causes the failure of integrated circuit products. Relevant research surveys show that 30% of integrated circuit failure products are caused by electrostatic discharge phenomena. Therefore, improving the reliability of integrated circuit electrostatic discharge protection has a non-negligible effect on improving the yield of products and even driving the entire national economy. [0003] Electrostatic discharge phenomenon is usually divided into three discharge modes according to the source of charge: HBM (Human Body Discharge Model), MM (Machine Discharge Mode), and CDM (Component Charge Discharge Mode). The two most common electrostatic discha...

AI Technical Summary

Problems solved by technology

[0011] The disadvantage of the above complementary SCR structure is mainly that its trigger voltage (avalanche breakdown voltage between the N-type substrate and the P well) is so high that it is difficult to apply to the on-chip ESD protection of integrated circuits under deep submicron technology.

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