Chip structure for LED

Abstract

The invention relates to a chip structure for an LED. The chip comprises a substrate, an epitaxial layer, a current extension layer, an N electrode, a P pad and a passivation layer. The passivation layer is superposed on the current extension layer. At least one hole is formed on the current extension layer, and the passivation layer contacts the epitaxial layer together through the hole. By forming at least one hole on the current extension layer, the surface of the epitaxial layer is exposed and the epitaxial layer is more reliably contacted with the passivation layer which covers on the epitaxial layer. Therefore, good contact between the current extension layer and the epitaxial layer is protected. The technology for manufacturing the LED is convenient, and the current extension of the chip can be obviously improved and the packaging percent of pass and the reliability of the LED are improved.

Description

technical field

[0001] The invention relates to the field of semiconductor devices, in particular to a chip structure of a light emitting diode. Background technique

[0002] The device reliability of light-emitting diodes (LEDs) is closely related to the current spreading layer. In the manufacture of gallium nitride (GaN)-based LEDs, the ohmic contact of p-type GaN is the most critical factor, because the formation of highly doped P -GaN is very difficult, so its film resistance is very high. It is necessary to evaporate a layer of conductive and light-transmitting film to realize the function of current expansion. This layer of film is generally called an ohmic conductive layer. At present, the most widely used ohmic conductive layer is a multi-metal layer, also known as a current spreading layer. The multi-metal layer is used as an ohmic conductive layer mainly because of the high work function of some materials, and it is easy to form an ohmic layer with the LED epitaxia...

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