Chip structure for LED

A light-emitting diode and chip structure technology, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problem of unreliable contact between the chip current expansion layer and the epitaxial layer, and achieve the effects of good protection and convenient manufacturing process

Inactive Publication Date: 2010-06-23
SHENZHEN CENTURY EPITECH LEDS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to solve the problem of unreliable contact between the chip current spreading layer and the epitaxial layer in the prior art, and to provide a light emitting diode chip structure with effectively improved reliability

Method used

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  • Chip structure for LED
  • Chip structure for LED
  • Chip structure for LED

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Embodiment Construction

[0010] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0011] Such as Figure 1-4 As shown, the embodiment of the present invention provides a chip structure of a light emitting diode, which includes a passivation layer 1, a P pad 2, a current spreading layer 3, an N electrode 4, an LED epitaxial layer 5 and a substrate 6. In this embodiment, The substrate is a sapphire substrate, and the current spreading layer 3 is provided with at least one hole 31 with a size of 2-8 microns, preferably 4 microns. The passivation layer 1 is in contact with the LED epitaxial layer 5 through the hole 31 .

[0012] Such as figure 2...

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Abstract

The invention relates to a chip structure for an LED. The chip comprises a substrate, an epitaxial layer, a current extension layer, an N electrode, a P pad and a passivation layer. The passivation layer is superposed on the current extension layer. At least one hole is formed on the current extension layer, and the passivation layer contacts the epitaxial layer together through the hole. By forming at least one hole on the current extension layer, the surface of the epitaxial layer is exposed and the epitaxial layer is more reliably contacted with the passivation layer which covers on the epitaxial layer. Therefore, good contact between the current extension layer and the epitaxial layer is protected. The technology for manufacturing the LED is convenient, and the current extension of the chip can be obviously improved and the packaging percent of pass and the reliability of the LED are improved.

Description

technical field [0001] The invention relates to the field of semiconductor devices, in particular to a chip structure of a light emitting diode. Background technique [0002] The device reliability of light-emitting diodes (LEDs) is closely related to the current spreading layer. In the manufacture of gallium nitride (GaN)-based LEDs, the ohmic contact of p-type GaN is the most critical factor, because the formation of highly doped P -GaN is very difficult, so its film resistance is very high. It is necessary to evaporate a layer of conductive and light-transmitting film to realize the function of current expansion. This layer of film is generally called an ohmic conductive layer. At present, the most widely used ohmic conductive layer is a multi-metal layer, also known as a current spreading layer. The multi-metal layer is used as an ohmic conductive layer mainly because of the high work function of some materials, and it is easy to form an ohmic layer with the LED epitaxia...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00
Inventor 吴大可朱国雄张坤
Owner SHENZHEN CENTURY EPITECH LEDS
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