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Novel plasma shower set

A plasma and shower technology, applied in semiconductor/solid-state device manufacturing, discharge tubes, electrical components, etc., can solve the problems of reduced ion beam transmission efficiency, reduced and aggravated ion beam transmission efficiency, etc., and achieves compact structure, convenient installation, and airtightness. good effect

Active Publication Date: 2010-06-30
BEIJING SHUOKE ZHONGKEXIN ELECTRONICS EQUIP CO LTD
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  • Application Information

AI Technical Summary

Problems solved by technology

However, below tens of kiloelectron volts, especially after entering the kiloelectron volt level, the space charge effect of the ion beam is prominent, and the cross-sectional size of the ion beam expands rapidly. In the case of a limited beamline transmission channel, there will be a large number of The ions of the ion beam are directly collided with the tube wall of the ion beam transmission channel or the beam blocking device and are lost, resulting in a significant reduction in the transmission efficiency of the ion beam
This reduction in efficiency is exacerbated with decreasing ion beam energy

Method used

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Embodiment Construction

[0029] Attached below image 3 and specific embodiments to further introduce the present invention, but not as a limitation to the invention.

[0030] The lead-out plate 1 is generally made of high-purity graphite, and the small hole in the middle is designed with a flared opening to facilitate the passage of plasma. The arc chamber 2 is designed as an integral structure, generally made of aluminum, which has good electrical and thermal conductivity, and is widely used in the semiconductor industry. Considered a low-pollution metal. Both sides of the permanent magnet 14 are installed in the arc chamber 2, and a heat insulation groove is designed on each side to control the temperature of the permanent magnet in a suitable range, which can effectively prevent demagnetization caused by high temperature. The lead connecting piece 3 is made of pure copper sheet or multi-sheet superimposed to improve flexibility and facilitate installation. The mounting flange 4 is made of aluminu...

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Abstract

The invention relates to a novel plasma shower set which mainly comprises a lead-out plate, an arc chamber, a filament, a mounting flange and a filament power supply structure comprising a lead wire rod. The arc chamber is fixedly connected with the mounting flange and a water cooling groove structure is arranged at the joint. The structure and the principle of the novel plasma shower set are explained in detail in the specification and a specific embodiment is presented.

Description

technical field [0001] The invention relates to the application of an ion implanter to the ion implantation process of the semiconductor process, which is used for electrically neutralizing the low-energy ion beam transmitted in the ion implanter in the ion implantation process, reducing the influence of the space charge effect, and improving The transmission efficiency of the ion implanter to the low-energy ion beam enhances the application ability of the ion implanter at the low-energy end. It belongs to the field of semiconductor equipment. Background technique [0002] In the ion implantation process of the semiconductor process, the energy range of the ion implanter is very large, from hundreds of electron volts to hundreds of kiloelectron volts. The ion implanter works in such a wide range of ion energy range, and the various operating parameters are different. There are huge changes. Generally, when the energy is above tens of kiloelectron volts, the space charge ef...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/265H01J37/317
Inventor 彭立波胡振东
Owner BEIJING SHUOKE ZHONGKEXIN ELECTRONICS EQUIP CO LTD