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Multi-wavelength vertical cavity surface emitting laser based on one-dimensional photonic crystal and its preparation method

A technology of vertical cavity surface emission and dimensional photonic crystals, which is applied in semiconductor lasers, lasers, phonon exciters, etc., to achieve the effect of multi-wavelength emission

Inactive Publication Date: 2011-12-21
BEIJING UNIV OF TECH
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  • Application Information

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Problems solved by technology

But the existing VCSELs are all single-wavelength lasers

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  • Multi-wavelength vertical cavity surface emitting laser based on one-dimensional photonic crystal and its preparation method
  • Multi-wavelength vertical cavity surface emitting laser based on one-dimensional photonic crystal and its preparation method
  • Multi-wavelength vertical cavity surface emitting laser based on one-dimensional photonic crystal and its preparation method

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Embodiment Construction

[0028] Specific embodiments of the present invention are described below in conjunction with accompanying drawing:

[0029] figure 1 The multi-wavelength vertical cavity surface-emitting laser structure based on one-dimensional photonic crystals involved in the present invention includes a forward electrode layer 1, a gallium arsenide layer 2, an aluminum gallium arsenide layer 3, and a p-type ohmic contact stacked vertically in sequence. Layer 5, aluminum gallium arsenide oxide current confinement layer 6, active region 7, n-type aluminum gallium arsenide layer 8, n-type gallium arsenide layer 9, n-type gallium arsenide substrate 10, substrate electrode layer 11 and Phase adjustment layer 13.

[0030] Wherein the phase adjustment layer 13 can be a semiconductor material with a high refractive index ratio, and can also be a material that is easy to etch and has good light transmission and has the effect of extending the resonant cavity length and phase adjustment. In this emb...

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Abstract

A multi-wavelength vertical cavity surface-emitting laser based on one-dimensional photonic crystals and a preparation method belong to the field of semiconductor optoelectronic devices. The laser has an inner-cavity contact-type laminated structure, the positive electrode layer (1) is arranged on the p-type ohmic contact layer (5), and above the ohmic contact layer (5) is a phase adjustment layer (13), aluminum gallium arsenide layer (3), gallium arsenide layer (2), and below the ohmic contact layer (5) are aluminum gallium arsenide oxide current confinement layer (6), active region (7), n-type aluminum gallium arsenide layer (8 ), n-type gallium arsenide layer (9), n-type gallium arsenide substrate (10), substrate electrode layer (11), wherein the phase adjustment layer (13) is made of a light-transmitting material, and its thickness can be determined according to The design of the position and frequency difference of the dual wavelength needs to adopt any thickness, not limited to an integer multiple of a quarter of the laser output wavelength of the laser. Since the phase adjustment layer with a certain thickness can adjust the phase change of the transmitted photon inside the laser resonator cavity, multi-wavelength emission can be realized.

Description

technical field [0001] A multi-wavelength vertical cavity surface-emitting laser based on a one-dimensional photonic crystal and a preparation method thereof belong to the field of semiconductor optoelectronic devices, and relate to a structure and preparation technology of a surface-emitting laser capable of simultaneously emitting multiple wavelengths. Background technique [0002] A multi-wavelength vertical cavity surface emitting laser is a semiconductor electroluminescent device that directly converts electrical energy into light energy. The multi-wavelength surface-emitting photonic device we designed has dual (multi-wavelength) wavelength output photonic devices with good monochromaticity, coherence characteristics and stable frequency intervals. (Multi-wavelength) wavelength synthesis wavelength interferometry and other technologies have a good application prospect. Therefore, the resonant cavity length adjustment layer designed in the present invention is of great...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/183H01S5/06
Inventor 关宝璐郭霞张敬兰任秀娟郭帅李硕沈光地
Owner BEIJING UNIV OF TECH