Photoelectric converter
A photoelectric conversion device and battery technology, applied in the field of solar cells, can solve problems such as the decrease of short-circuit current of solar cells, the loss of transparent conductive layers, etc.
Inactive Publication Date: 2010-07-14
MITSUBISHI HEAVY IND LTD
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Problems solved by technology
When forming the above-mentioned transparent conductive layer, light absorption by the transparent conductive layer becomes a loss, which causes the short-circuit current of the solar cell to decrease
Therefore, there is a problem of improving the transparency of the transparent conductive layer to increase the short-circuit current of the solar cell
Method used
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Embodiment
[0108] (Optical thin film calculation)
[0109] Based on Fresnel reflection, the models formed with GZO films with light absorption characteristics (transparency) such as (A): small light absorption rate, (B) medium light absorption rate, and (C): large light absorption rate Optical thin film interference calculations. As calculation software, OPTAS-FILM of Cybernet Corporation was used. As the dielectric data of the glass and silver thin films, data described in known documents were used. The dielectric data of the GZO film was obtained by optically measuring the GZO film formed on the glass. As the dielectric data of crystalline silicon, the data of single crystal Si described in known literature was used. Let the refractive index of air be 1 and the extinction coefficient be 0.
[0110] The absorption spectrum of a structural model (structural model 1) in which GZO films with light absorption characteristics (A), (B), and (C) were formed on glass substrates was calculat...
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Short circuit current of a photoelectric converter is enhanced by optimizing a transparent conductive layer. The photoelectric converter (100) has a first transparent electrode layer (2), a power generation layer (3), a second transparent electrode layer (6), and a back surface electrode layer (4) formed on a substrate (1). The film thickness of the second transparent electrode layer (6) is 80 nm or more but not more than 100 nm, and the light absorptivity of the second electrode layer (6) in the wavelength region of 600 nm or more but not more than 1,000 nm is 1.5% or less. In the photoelectric converter (100), the second transparent electrode layer (6) has a film thickness of 80 nm or more but not more than 100 nm, and the second transparent electrode layer (6) and the back surface electrode layer (4) have a reflectivity of light of 91% or above in the wavelength region of 600 nm or more but not more than 1,000 nm.
Description
technical field [0001] The present invention relates to a photoelectric conversion device, and more particularly, to a solar cell using silicon as a power generation layer. Background technique [0002] A solar cell is known as a photoelectric conversion device that receives light and converts it into electric power. Among solar cells, for example, a thin-film solar cell in which a thin-film silicon-based layer is stacked on the power generation layer (photoelectric conversion layer) has the following advantages: it is easy to increase the area, and the film thickness is about 1 / 100 of that of a crystalline solar cell. Materials can be completed and so on. Therefore, thin-film solar cells can be manufactured at low cost compared with crystalline solar cells. However, as a disadvantage of thin-film solar cells, for example, conversion efficiency is lower than that of crystalline solar cells. [0003] In thin-film solar cells, various studies have been conducted in order to...
Claims
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IPC IPC(8): H01L31/04
CPCH01L21/02573Y02E10/52H01L21/02631H01L31/0236H01L21/02554H01L31/0522H01L31/022466Y02E10/544H01L31/0687H01L31/1884H01L31/0547H01L31/022483H01L31/02366Y02E10/547
Inventor 坂井智嗣浅原裕司小林靖之森匡史鹤我薰典山下信树
Owner MITSUBISHI HEAVY IND LTD