Method for refining trichlorosilane

A technology of trichlorosilane and refining method, applied in the direction of silicon, halogenated silanes, halogenated silicon compounds, etc., can solve the problems of changes in the purity of silicon tetrachloride, unstable quality, etc., and achieves half of the possibility and long-term cost reduction. half, large effect
CN101780957AInactive Publication Date: 2010-07-21HUALU ENG & TECH
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
HUALU ENG & TECH
Publication Date
2010-07-21
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention provides a method for refining trichlorosilane. When polysilicon is prepared according to a vapor deposition method, solution of dichloro-silane, trichlorosilane and silicon tetrachloride which are obtained in the gas discharged from a reduction furnace is processed through a rectifying tower. The method is characterized in that the dichloro-silane is extracted on the tower top and simultaneously the trichlorosilane and the silicon tetrachloride are extracted by lateral lines; the tower top temperature and any one middle section temperature T of the rectifying tower are measured; for keeping the measured middle section temperature T in a certain range, the quantity of reflux R of the tower top is controlled; when the middle section temperature T rises, the quantity of reflux R is increased; and when the middle section temperature T decreases, the quantity of reflux R is reduced. With the component change of the chlorosilane solution, the method prevents the reduction of the purities of the trichlorosilane and the silicon tetrachloride.
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Description

technical field

[0001] The invention relates to a method for recovering high-purity trichlorosilane. Background technique

[0002] Monocrystalline silicon is the material used to manufacture semiconductors, and monocrystalline silicon is made of high-purity polycrystalline silicon. High-purity polysilicon is produced by a vapor-phase deposition method called Siemens. In the manufacture of polysilicon by the Siemens method, the mixed raw material gas of trichlorosilane and hydrogen is usually sent to the reduction furnace. Then, in the reduction furnace, on the surface of the silicon rod heated by electricity, the polysilicon is deposited by the vapor phase deposition method.

[0003] In the Siemens method, the reaction rate of the raw material trichlorosilane is as low as 10%, and most of the trichlorosilane is unreacted in the reduction furnace and discharged as a gas. At the same time, a part of the trichlorosilane reacted in the reduction furnace It turns into silicon ...

Claims

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