Wafer rough polishing solution

Abstract

The invention discloses a wafer rough polishing solution. The wafer rough polishing solution adopts the technical scheme that the polishing solution is prepared by mixing and stirring the following raw materials in percentage by weight: 2 to 50 percent of silicon dioxide abrasive material, 0.2 to 10 percent of pH regulator, 0.1 to 5 percent of chelating agent, 0.01 to 5 percent of surfactant and the balance of deionized water. By adopting the technical scheme, the polishing solution has stable solution performance under the wafer rough polishing application condition, and the polishing speed, polishing uniformity and surface quality can meet the manufacture requirement.

Description

technical field [0001] The invention relates to a rough polishing liquid for wafers in the photoelectric and IC industries. Background technique [0002] At present, chemical mechanical planarization technology has become a key technology applied to semiconductor component manufacturing engineering among semiconductor component manufacturers all over the world. Among them, the chemical mechanical polishing liquid is the most critical material in the CMP process, and the cost of the two together with the polishing pad accounts for more than 60% of the cost of the CMP process. [0003] There are only a few suppliers of chemical mechanical polishing fluid in the world, and the demand of domestic semiconductor chip factories basically depends on imports. Therefore, a small amount of domestic products can be produced to replace similar foreign products. Among them, domestic and foreign wafer chemical mechanical polishing fluids are mainly based on nano-dioxide Silicon is used as...

AI Technical Summary

Problems solved by technology

[0003] There are only a few suppliers of chemical mechanical polishing fluid in the world, and the demand of domestic semiconductor chip factories basically depends on imports. Therefore, a small amount of domestic products can be produced to replace similar foreign products. Among them, domestic and foreign wafer chemical mechanical polishing fluids are mainly based on nano-dioxide Silicon is used as an abrasive particle and consumes a lot. However, the domestically prepared silica polishing fluid has relatively small particles, uneven distribution, and high metal ion content, so the polishing rate cannot be further improved. Unbalanced chemical etching and mechanical action cause severe scratches and high surface roughness, limiting the use of the product.