DRAM (Dynamic Random Access Memory) storage control method and device

A technology of storage control and state control, applied in the field of DRAM, to achieve the effect of improving bus efficiency

Active Publication Date: 2010-07-28
FENGHUO COMM SCI & TECH CO LTD +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0013] The technical problem to be solved by the present invention is

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  • DRAM (Dynamic Random Access Memory) storage control method and device
  • DRAM (Dynamic Random Access Memory) storage control method and device
  • DRAM (Dynamic Random Access Memory) storage control method and device

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Embodiment Construction

[0048] Aiming at the problem of low efficiency of the storage bus of the external memory of the current DRAM, the present invention provides a DRAM storage control device, which improves the utilization efficiency of the DRAM storage bus, thereby greatly improving the maximum bandwidth processing of the data communication system in actual work ability. The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0049] figure 2 It is a structural schematic diagram of the DRAM storage control device of the present invention, such as figure 2 As shown, the device 200 completes the data storage between the client and the DRAM 220 through the storage bus, wherein the DRAM (DDR2 or DDR) 220 has multiple BANKs (BANK1, BANK2, BANK3 and BANK4 in this embodiment), each BANK Has multiple basic storage units. The DRAM storage control device 200 includes a client write request interface processing unit 210, a client...

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Abstract

The invention discloses DRAM storage control method and device. The method comprises the following steps of: A10. decoding read and write requests and rearranging into a plurality of BANK-based read and write request arrays according to BANK addresses; A20. respectively arbitrating the read and write requests; A30. respectively generating respective read and write request commands and activating commands and/or precharge commands; and A40. sending the read and write request commands to a command bus, and on the premise of satisfying the read and write protection time limit of a DRAM, inserting the activating commands and/or percharge commands of the read and write command requests in the other BANKs based read and write request arrays before the read and write command request in the BANK-based read and write request array. In the invention, the activating commands and the precharge commands can be completely hidden in the data transmission process, and seemingly, a DRAM data bus always transmits data, and therefore, the bus efficiency of the DRAM is greatly improved.

Description

technical field [0001] The invention relates to DRAM, in particular to a DRAM storage control method and device. Background technique [0002] The terms used in the application documents are explained as follows: [0003] BANK, memory cell array; [0004] BC, bank controller, BANK control unit; [0005] MC, master controller, MC main control unit. [0006] At present, large-capacity external memories such as SDRAM, DDR SDRAM, and DDR2 SDRAM are often used in the field of data communication. The bus bandwidth of the external memory often determines the maximum bandwidth processing capability of a data communication system in actual work. Therefore, increasing the bus bandwidth of DRAM is one of the important ways to improve the bandwidth processing capability of the data communication system. [0007] Such as figure 1 As shown, DRAM is composed of memory cell array 100 , command decoder 101 , BANK address decoder 103 , row address decoder 102 , column address decoder 104...

Claims

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Application Information

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IPC IPC(8): G06F13/18
Inventor 冯波张涛陶志飞
Owner FENGHUO COMM SCI & TECH CO LTD
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