Manufacturing method of flash memory component

Abstract

The invention relates to a manufacturing method of a flash memory component, which comprises the following steps: providing a semiconductor substrate; forming two gate structures on the substrate; carrying out an ion implantation process to respectively form a first source region in the substrate at two outer sides of the two gate structures, and carrying out an ion implantation process in the substrate between the two gate structures to form a first drain region; carrying out a pocket type implantation process in the substrate between the two gate structures to form two doped regions at two sides of the first drain region; positioning an L-shaped clearance wall above the first drain region; carrying out an ion implantation process to form a second drain region below the first drain region, wherein the first drain region and the second drain region have abrupt junction appearance compared with the first source regions; and forming a potential barrier plug on the first drain region. The manufacturing method of the memory component of the invention can reduce the drain reading voltage, and the pocket type implantation process is used for improving the short channel effect.

Description

technical field [0001] The present invention relates to a manufacturing method of memory, in particular to a manufacturing method of a flash memory (flash memory) component. Background technique [0002] With the advancement of semiconductor process technology, the process technology of memory components has also entered the nanometer era. Miniaturizing the size of components can not only increase the density of integrated circuits per unit area, but also improve the current driving capability of the components themselves, which can be said to kill two birds with one stone, but in fact this is not the case. The short channel effects (Short Channel Effects, SCE) and gate leakage current brought about by entering the nanometer era make it more and more difficult to improve device performance by reducing the channel length and the thickness of the gate oxide layer. [0003] As for the lightly doped drain (LDD), it can increase the breakdown voltage (Breakdown Voltage) of the d...

AI Technical Summary

Problems solved by technology

However, although the pocket-type implantation improves the short channel effect of the component, due to the high doping of the channel, there will be a phenomenon of drain current degradation (IDSAT Degradation).

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