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Low pressure method annealing diamonds

A diamond and pressure technology, which is applied in the annealing field of single crystal CVD diamond, can solve problems such as high cost

Inactive Publication Date: 2010-09-08
CARNEGIE INSTITUTION OF WASHINGTON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0012] The high pressures involved in the above methods result in potentially high cost

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Embodiment Construction

[0024] Reference will now be made in detail to the preferred embodiments of the present invention.

[0025] The method of the present invention is twofold in nature: the first is a low-pressure method of annealing the diamond, or otherwise improving its optical properties, and the second is a two-step process to rapidly produce a diamond of high optical quality by: a) growing Single crystal diamond, preferably single crystal diamond, and preferably by microwave plasma chemical vapor deposition; and then b) performing a low pressure process to anneal the grown diamond, or improve the optical quality of the grown diamond. The latter approach is so useful that it provides a means of improving the quality of CVD diamonds that grow rapidly at rates that typically produce variegated diamonds, such as brown diamonds.

[0026]As used in reference to the methods of this application, the term "annealing" shall be understood as improving certain properties of the diamond, including, but ...

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Abstract

The present invention relates to method of improving the optical properties of diamond at low pressures and more specifically to a method of producing a CVD diamond of a desired optical quality which includes growing CVD diamond and raising the temperature of the CVD diamond from about 1400 DEG C to about 2200 DEG C at a pressure of from about 1 to about 760 torr outside the diamond stability field in a reducing atmosphere for a time period of from about 5 seconds to about 3 hours.

Description

[0001] Statement of Government Interest [0002] This invention was made with US Government support, National Science Foundation Grant No. NSFEAR-05500040. The US Government has certain rights in this invention. technical field [0003] The present invention relates generally to the annealing of diamond, and more particularly to the annealing of diamond at low pressures, that is, at pressures much lower than those previously used for annealing single crystal CVD diamond, including pressures of about one atmosphere or less. ) to anneal single crystal CVD diamond. The present invention is useful for improving the optical properties of diamond, and is particularly useful in producing high optical quality single crystal CVD diamond at fast growth rates. Background technique [0004] Chemical vapor deposition growth of diamonds is accomplished by transferring energy into the gas phase carbon containing precursor molecules. For example, microwave energy can be used to generate ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B25/02
CPCC30B33/02C30B29/04B01J2203/0695
Inventor 罗素·J·赫姆利毛和光严智秀孟玉飞
Owner CARNEGIE INSTITUTION OF WASHINGTON