Semiconductor flip-chip bonding packaging heat radiation improved structure

Abstract

The invention relates to a semiconductor flip-chip bonding packaging heat radiation improved structure comprising a chip, an electrical interconnection material, a lead frame, an encapsulation material and a spring heat radiator, wherein the lead frame is provided with a transmission pin; the electrical interconnection material is implanted at the front face of the chip which is arranged on the transmission pin in an inversion way; the encapsulation material encapsulates the spring heat radiator, the chip, the electrical interconnection material and the lead frame to form an encapsulation body, the periphery of the spring heat radiator is fixed by the encapsulation material, one end of the spring heat radiator is connected with the chip and the other end exposes out of the surface of the encapsulation body so as to radiate the heat of the chip out of the encapsulation body, thereby solving the heat radiation problem for a load-bearing base without a mostly-exposed chip or flip-chip packaging and greatly enhancing electric and thermal performances and reliability of the product.

Description

technical field [0001] The invention relates to a heat dissipation structure in the technical field of semiconductor packaging, in particular to an improved heat dissipation structure for semiconductor flip-chip packaging. Background technique [0002] The traditional semiconductor chip flip-chip packaging structure mostly conducts the heat of the chip through the carrier board, which mainly has the following shortcomings: [0003] 1. In the traditional semiconductor chip flip-chip packaging structure, the chip is suspended on the carrier board, and it is difficult for the suspended chip to dissipate heat sufficiently, which in turn affects the electrothermal performance and reliability of the final product. [0004] 2. In the traditional semiconductor lead frame package, most of the heat generated by the chip is conducted through the metal carrier plate in the package body. In order to meet the high heat dissipation requirements, the area of ​​the carrier plate is increased...

AI Technical Summary

Problems solved by technology

[0003] 1. In the traditional semiconductor chip flip-chip packaging structure, the chip is suspended on the carrier board, and it is difficult for the suspended chip to dissipate heat sufficiently, which in turn affects the electrothermal performance and reliability of the final product

[0004] 2. In the traditional semiconductor lead frame package, most of the heat generated by the chip is conducted through the metal carrier plate in the package body. In order to meet the high heat dissipation requirements, the area of ​​the carrier plate is increased. On the one hand, it will be affected by the difference in thermal expansion rate between different materials. It is easy to cause reliability problems such as stress residue and delamination; on the other hand, it does not meet the development requirements of the trend of semiconductor packages becoming thinner and smaller

[0005] 3. In the traditional semiconductor packaging structure, the heat dissipation effect is also improved by using high thermal conductivity plastic sealing compound. In addition to the high cost price of high thermal conductivity plastic sealing compound, it also puts forward higher requirements for the control of product plastic packaging process, and The heat dissipation effect is not obvious

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