The invention relates to the technical field of
semiconductor packaging, in particular to an improved fan-out
wafer level packaging process applied to a high-performance W
wave band, which comprises the following steps of: forming a first surface supporting carrier plate, and laying a double-sided
adhesive film on the first surface supporting carrier plate to provide support for subsequent
chip fixation; forming a cavity between the
chip area and the medium area, and forming an
electroplating area at a required position to prevent the
air bridge structure from collapsing; the
chip is fixed on the supporting carrier plate through a
flip chip; the chip is fixed by using a film pressing technology, so that the stability of the chip in a subsequent process is ensured; a cavity is formed between a chip area and a
dielectric area, so that collapse of an
air bridge structure is prevented,
structural stability is improved, intrinsic performance deterioration of the
transistor is prevented,
dielectric is not attached to the surface of an active area, intrinsic performance deterioration of the
transistor is prevented, and stable performance of a device is ensured. And
electrical connection of the upper and lower parts of the
package is realized through a glass perforation technology, so that the
electric heating performance is improved.