Active component array substrate and liquid crystal display panel
A technology for liquid crystal display panels and active components, which is applied to electrical components, electrical solid-state devices, semiconductor devices, etc., can solve the problem of high resistance value, and achieve the effect of reducing detection failure.
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no. 1 example
[0031] Figure 2A It is a schematic diagram of the active device array substrate according to the first embodiment of the present invention. In this embodiment, only a part of the active device array substrate 200 is shown, and three sets of electrode wires 220 and corresponding detection units 222 are taken as an example.
[0032] Please refer to Figure 2A The active device array substrate 200 has a display area D and a peripheral circuit area P, and the active device array substrate 200 includes a plurality of electrode wires 220 and a plurality of detection units 222 . A plurality of electrode wires 220 are arranged in the display area D and extend into the peripheral circuit area P. As shown in FIG. A plurality of detection units 222 are arranged in the peripheral circuit area P, wherein the detection unit 222 has a plurality of short-circuit bars 292 and a plurality of electrical connection units 230, and each electrical connection unit 230 is respectively connected to...
no. 2 example
[0040] Figure 3A It is a schematic diagram of an active device array substrate according to a second embodiment of the present invention. Figure 3B for Figure 3A Schematic cross-section along line C-C'. Please also refer to Figure 3A and 3B The active device array substrate 300 of this embodiment is similar to the first embodiment, except that the electrical connection unit 320 of the active device array substrate 300 further includes a semiconductor layer 290 disposed on the first interlayer from which the second conductive pattern 250 is removed. on the electrical layer 270 , and the semiconductor layer 290 is located between the first dielectric layer 270 and the second dielectric layer 280 .
[0041] Since the semiconductor layer 290 is produced by a dry etching process, the underlying first dielectric layer 270 can be prevented from being over-etched, so the discontinuity of the slope of the film layer can be prevented, and the technical effect of preventing the t...
no. 3 example
[0043] Figure 4A It is a schematic diagram of an active device array substrate according to a third embodiment of the present invention. Figure 4B for Figure 4A Schematic cross-section along line D-D'. Please also refer to Figure 4A and Figure 4B The active device array substrate 400 of this embodiment is similar to the first embodiment, except that the second conductive pattern 250 of the electrical connection unit 420 in the active device array substrate 400 near the first contact opening H1 is completely removed.
[0044] In this embodiment, the electrical connection unit 420 further includes a third contact window opening H3, which is disposed on the first side 210A of the electrode wiring 220, so that the transparent conductive pattern 260 is electrically connected through the third contact window opening H3. Shorting bar 292. In detail, after the second conductive pattern 250 near the first contact window opening H1 is removed, the short-circuit bar 292 is disc...
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