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Protective device for integrated circuit

A technology for protecting devices and integrated circuits, which is applied in the field of integrated circuit protection devices, and can solve the problem that charge accumulation will not be alleviated

Active Publication Date: 2010-10-13
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

While antenna diodes are effective against plasma induced damage (PID) and / or antenna effects, other forms of charge buildup may not be mitigated

Method used

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  • Protective device for integrated circuit
  • Protective device for integrated circuit
  • Protective device for integrated circuit

Examples

Experimental program
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Embodiment Construction

[0013] The present invention generally relates to integrated circuit devices, in particular to an integrated circuit protection device. It should be understood, however, that the following disclosure provides many different embodiments, or examples, of implementing different features of the invention. Specific examples of components and arrangements are described below to simplify description of the present disclosure. Of course, these are just examples and are not limited thereto. Furthermore, the present disclosure repeats the same reference numerals and / or letters in different instances. This repetition is for clarity and does not in itself indicate a relationship between the various embodiments and / or configurations discussed.

[0014] The present disclosure generally relates to semiconductor devices or integrated circuits that include protection devices. Protection devices provide protection from plasma-induced damage (PID) during the fabrication of integrated circuits...

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Abstract

The invention provides a protective device for an integrated circuit. The protective device comprises a NMOS device. The NMOS device is connected to a grid of an active device, like an inverter. The protective device can avoid the plasma induced damage (PID), such as a charge effect which may damage the active device. The NMOS protective device provides a voltage source path to the accumulated charges in the process, such as grounding or Vss.

Description

technical field [0001] The present invention generally relates to integrated circuit devices, in particular to an integrated circuit protection device. Background technique [0002] Antenna diodes are diodes used in semiconductor devices to protect them from damage caused by electrostatic discharge events, such as plasmas. The antenna diode is placed in the integrated circuit so that it provides a discharge path for charges generated during device fabrication, such as those generated using plasma during processing (eg, etching). The antenna diode is typically connected to a conductive trace that may be connected to the gate of an active device of a circuit that may be susceptible to hazards from charge generation. While antenna diodes are effective in preventing plasma induced damage (PID) and / or antenna effects, other forms of charge accumulation may not be mitigated. [0003] Therefore, there is a need for an improved integrated circuit protection device. Contents of t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/04H01L23/60H01L21/82H02H9/02
CPCH01L27/0629H01L27/0266H01L27/0207H01L2924/0002H01L2924/00
Inventor 汤钦昕李建兴
Owner TAIWAN SEMICON MFG CO LTD