Substrate processing method and substrate processed by this method

Abstract

Disclosed is a substrate processing method which enables to form a recessed and projected structure in a substrate surface, while reducing the number of processing steps. Specifically disclosed is a substrate processing method wherein particles (11) are scattered over a surface (10s) of a substrate (10), and a recessed and projected structure (12) is formed in the substrate surface by etching thesubstrate surface using the particles as a mask, while removing the mask (11) by the etching at the same time. By this method, a step for removing the mask (11) from the substrate surface (10s) afterformation of the recessed and projected structure (12) becomes unnecessary. Consequently, the number of processing steps required after formation of the recessed and projected structure in the substrate surface can be significantly reduced, thereby greatly improving the productivity.

Description

technical field [0001] The invention relates to a substrate processing method for forming a fine concave-convex structure on the surface of a substrate, and a substrate processed by the method. Background technique [0002] In recent years, the development of solar cell devices has been continuously advanced. A solar cell has a photoelectric conversion layer. Efficiently absorbing light in this photoelectric conversion layer is essential for improving the performance of the device. Among them, a processing method is known in which a fine uneven structure is formed on the light incident surface of the device to minimize the reflection of light at the interface (for example, refer to Patent Documents 1 and 2). [0003] As a method of forming a fine concave-convex structure on the surface of a substrate, Patent Document 1 discloses a method in which a resist material is sprayed onto the surface of the substrate by spraying and drawn into a resist pattern, and then, the resist...

AI Technical Summary

Problems solved by technology

[0006] However, there is a problem in the prior art substrate processing method using a resist material or silicon dioxide particles as an etching mask. After the etching process, there is a process of removing the mask remaining on the substrate surface.

Therefore, the substrate processing method in the prior art cannot achieve the purpose of greatly reducing the number of processes required in the substrate processing process, thereby failing to improve production efficiency

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