Method of fabrication of a FINFET element

Abstract

The present disclosure provides a FinFET element and a method of fabricating a FinFET element. The FinFET element includes a germanium-FinFET element (e.g., a multi-gate device including a Ge-fin). In one embodiment, the method of fabrication the Ge-FinFET element includes forming silicon fins on a substrate and selectively growing an epitaxial layer including germanium on the silicon fins. A Ge-condensation process may then be used to selectively oxidize the silicon of the Si-fin and transform the Si-fin to a Ge-fin. The method of fabrication provided may allow use of SOI substrate or bulk silicon substrates, and CMOS-compatible processes to form the Ge-FinFET element.

Description

technical field [0001] The present invention generally relates to the field of semiconductor device fabrication, and more particularly to methods of fabricating Fin Field Effect Transistors (FinFETs) or portions thereof. Background technique [0002] A dual-gate MOSFET is a MOSFET that includes two gates in one device. These devices are called FinFETs because their structure includes thin fins extending from the substrate. Silicon-based FinFETs can be successfully fabricated using conventional MOSFET technology. Typical FinFETs are fabricated on a substrate with an insulating layer above the substrate with thin fins extending from the substrate, eg, etched into the silicon layer of the substrate. The channel of the FET is formed in this vertical fin. Over (or around) the fins there is a gate. The benefit of a double gate is that having gates on both sides of the channel results in a gate that can control the channel from both sides. Additional benefits of FinFETs includ...

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Problems solved by technology

However, GOI substrates are not widely used in industrial processing

Additionally, GOI substrates can have crystal quality issues, especially at larger wafer sizes, e.g., 300mm wafers

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