Transmission-type GaN ultraviolet photocathode based on varied-doping structure and manufacturing method

A manufacturing method and transmissive technology, applied in circuits, electrical components, final product manufacturing, etc., can solve problems such as the inability to significantly improve cathode photoemission performance, achieve good long-wave ultraviolet response, improve transport efficiency, and improve surface The effect of escape chance

Inactive Publication Date: 2011-09-28
CHONGQING UNIV
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Problems solved by technology

Although the photoemission efficiency of the cathode can be improved by properly selecting the doping concentration, this compromise is limited to the material itself, which has great limitations and cannot significantly improve the photoemission performance of the cathode.

Method used

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  • Transmission-type GaN ultraviolet photocathode based on varied-doping structure and manufacturing method
  • Transmission-type GaN ultraviolet photocathode based on varied-doping structure and manufacturing method
  • Transmission-type GaN ultraviolet photocathode based on varied-doping structure and manufacturing method

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Embodiment Construction

[0023] The present invention will be described in further detail below in conjunction with the accompanying drawings and specific embodiments.

[0024] figure 1 It is a schematic structural diagram of a transmissive GaN ultraviolet photocathode based on a variable doping structure, as shown in the figure: a transmissive GaN ultraviolet photocathode based on a variable doping structure, the cathode is made of sapphire from bottom to top. The bottom layer 1, the Al N buffer layer 2, the p-type GaN photoemission layer 3 with a variable doping structure, and the Cs or Cs / O active layer 4, the doping concentration of the p-type GaN photoemission layer 3 is from the inner surface to the outside The surface is gradually lowered.

[0025] The p-type GaN photoemission layer 3 is epitaxially grown on the AlN buffer layer 2, and the p-type GaN photoemission layer 3 has a thickness of t 1 The corresponding doping concentration of the GaN layer is N A1 31, the thickness is t 2 The corr...

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Abstract

The invention discloses a transmission-type GaN ultraviolet photocathode based on a varied-doping structure and a manufacturing method. The cathode consists of a cathode transmission-type substrate layer made of sapphire, an AIN buffer layer, a p-shaped GaN photoemission layer with a varied-doping structure and a Cs or Cs / O activating layer from bottom to top; and the doping concentration of the p-shaped GaN photoemission layer is gradually lowered from the inner surface to the outer surface. In the invention, the transmission-type GaN ultraviolet photocathode is designed and prepared by adopting the varied-doping structure with the doping concentration changing from high to low from the inner surface to the outer surface; the varied-doping mode is utilized to generate a built-in electricfield which is used for helping photoelectrons to be transported to the surface in a GaN cathode body, so as to improve the in vivo transport efficiency and surface effusion rate of the photoelectrons and finally improve the photoemission quantum efficiency of the photocathode; and simultaneously, the GaN photocathode has better longwave ultraviolet response ability, and all the improvements of the photoemission property rely on the built-in electric field auxiliary effect caused by varied-doping.

Description

technical field [0001] The invention relates to the technical field of ultraviolet detection materials, in particular to a transmissive GaN ultraviolet photocathode based on a variable doping structure based on a combination of semiconductor material doping technology, semiconductor material epitaxy technology and ultra-high vacuum surface activation technology and a manufacturing method. Background technique [0002] In recent years, with the improvement of GaN material preparation technology, p-type doping technology and the development of ultra-high vacuum technology, GaN UV photocathode is becoming a new type of high-performance UV photocathode. The surface of this cathode has a negative electron affinity (NEA). Compared with the traditional positron affinity UV photocathode and solid-state UV detection devices, the GaN UV photocathode shows high quantum efficiency, small dark emission, and UV-visible light suppression. It has many advantages such as high ratio, good sta...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/101H01L31/0304H01L31/18
CPCY02P70/50
Inventor 杜晓晴常本康钱芸生高频王晓晖张益军
Owner CHONGQING UNIV
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