GaN photoelectric cathode with superlattice nanowire structure

Abstract

The invention discloses a GaN photoelectric cathode with a superlattice nanowire structure. The photoelectric cathode is composed of an Al2O3 substrate layer (1), an AlN buffer layer (2) growing on the substrate, a p-type superlattice AlGaN/GaN nanowire electron emission layer (3) and a Cs/O activation layer (4), from bottom to top. AlGaN/GaN superlattice nanowires are adopted, AlGaN and GaN materials are designed to alternately grow in the form of thin layers of dozens of nanometers and keep strict periodicity to form a multi-layer film structure, namely, an AlGaN/GaN superlattice is formed, and a nanowire structure is adopted on the surface of the AlGaN/GaN superlattice. The GaN photoelectric cathode with the superlattice nanowire structure can influence the movement of charges in the structure, and can overcome the defects of a traditional film photoelectric cathode at the aspects of photon absorption and electron transport, so that the quantum efficiency is changed, the emission performance of photoelectrons and the response wave band of the photoelectric cathode are improved, and finally, the photoelectric emission quantum efficiency of the GaN photoelectric cathode is improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductors and microelectronic devices, and in particular relates to a GaN photocathode with a superlattice nanowire structure. [0002] technical background [0003] A photocathode is a photoemissive material that converts light signals into electrical signals by using the external photoelectric effect. In recent years, with the development and improvement of GaN material preparation technology and p-type doping technology, GaN photocathode is becoming a new type of high-performance photocathode. GaN is the third-generation semiconductor material, which has the advantages of wide bandgap, high quantum efficiency, good stability, radiation resistance, and corrosion resistance. These characteristics make it suitable for the production of high-frequency, high-power, high-temperature, radiation-resistant, and high-density integrated circuits . Its characteristics in terms of band gap make it suitable fo...

AI Technical Summary

Problems solved by technology

However, with the progress of research, it is difficult to improve the performance of GaN photocathode by changing the substrate, material structure, thickness, and doping concentration. At present, the performance of GaN photocathode with traditional structure is difficult to be further improved.

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