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Method and system for evaluating single-particle effect index of satellite device

A technology of single event effect and single event reversal, which is applied in the field of evaluation of single event effect indicators of satellite devices, can solve the problem of not comprehensively and deeply developing the risk index system of device single event effect, and not establishing a single event effect risk index system of satellite devices And other issues

Inactive Publication Date: 2010-11-17
BEIJING SHENGTAOPING TEST ENG TECH RES INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] At present, domestic research in this area is in its infancy, and the research on the single event effect risk index system and calculation methods of devices has not been comprehensively and deeply carried out. It is mainly limited to the tracking of foreign technologies, and the single event effect risk index system for satellite devices has not been established. Evaluation process of effect index and calculation method of single event effect index

Method used

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  • Method and system for evaluating single-particle effect index of satellite device
  • Method and system for evaluating single-particle effect index of satellite device
  • Method and system for evaluating single-particle effect index of satellite device

Examples

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Effect test

example 1

[0118] Suppose N=1, T=1 day, then T=8.64×10 4 s,

[0119] Then there is the formula T*FLUX1<1

[0120] (8.64×10 4 )×(FLUX1)2 , therefore, FLUX1-5 / s.cm 2

[0121] FLUX2-7 / s.cm 2

[0122] Check the corresponding graph of LET---FLUX integral spectral line, LET1 is about 26MeVcm 2 / mg, LET2 about 31MeV cm 2 / mg. That is, the threshold value of LET ranges from 26 to 31 MeVcm2 / mg.

example 2

[0124] Suppose N=0.04, T=1 day, then T=8.64×10 4 s, assuming that the maximum number of single particles encountered per square centimeter of sensitive area is less than 0.04, that is, a certain safety margin is properly considered. During the mission, the maximum number of single particles encountered per square centimeter of sensitive area is:

[0125] T×FLUX1=(8.64×10 4 )×FLUX12 ,

[0126] Then FLUX1=4.6×10 -7 / s.cm 2

[0127] FLUX2=4.6×10 -9 / s.cm 2

[0128] Check the corresponding graph of LET---FLUX integral spectral line, LET1 is about 30MeV cm 2 / mg, LET2 about 37MeV cm 2 / mg. That is, the LET threshold ranges from 30 to 37 MeV cm 2 / mg, to verify the rationality of setting the LET threshold range.

[0129] According to the number of single particles encountered in all sensitive areas during the mission, combined with system mission criticality and device availability, project progress stage, etc., select the appropriate LET threshold range. Such as LET thr...

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Abstract

The invention discloses a method for evaluating a single-particle effect index of a satellite device. The evaluating method comprises the following steps of: acquiring a single-particle turnover test value of a to-be-evaluated device by testing or simulating; calculating a single-particle turnover index required prediction value, required by a task, of the to-be-evaluated device; acquiring a radiation design margin according to a test expected value of the single-particle turnover index of the device and the single-particle turnover index required prediction value; and evaluating the radiation risk level of the device according to the radiation design margin. According to the technical scheme, the method for evaluating the single-particle effect index of the satellite device can effectively direct the model selection of the satellite device by calculating the single-particle turnover rate index of the device, and provide quality assurance for the satellite to victoriously finish the task.

Description

technical field [0001] The invention relates to the field of risk assessment of satellite devices, in particular to a method and system for evaluating single event effect indicators of satellite devices. Background technique [0002] In the complex and harsh space radiation environment, the single event effect of the device will occur, causing the logic state of the circuit to flip from "0" to "1", or cause the circuit to have a logic state error, circuit latch, circuit burnout, etc. Single event effects are divided into two types: non-destructive single event effects and destructive single event effects. Single event flipping, transient, and function suspension are non-destructive single event effects, and single event phenomena such as locking, burning, and gate penetration are destructive Sexual single event effect. In order to improve the survivability of devices in space orbit, anti-radiation hardening technology can be used to slow down or protect the impact of single...

Claims

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Application Information

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IPC IPC(8): G01R31/00
Inventor 王群勇阳辉陈冬梅陈宇白桦钟征宇郭明银刘燕芳宋岩吴文章
Owner BEIJING SHENGTAOPING TEST ENG TECH RES INST
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