Method for estimating reference interval of on-orbit single event upset rate of device

Abstract

The invention discloses a method for estimating an on-orbit single event upset rate reference interval of a device, and the method comprises the steps: obtaining test data of a single event upset cross section (sigma) and an incident ion parameter (LET) of the device through carrying out a ground heavy ion irradiation test; estimating interval ranges of parameters such as a single event upset saturation cross section (sigma sat), a single event upset LET threshold value (LETth), a device sensitive area depth (d), a device funnel length (F) and the like; adjusting each parameter in the pre-estimation range, fitting by using a Weibull curve, and carrying out simulation by using a Monte Carlo simulation tool to obtain an in-orbit single event upset rate; and finally, obtaining a change relationship between each parameter and the average merit figure of the in-orbit upset rate, thereby determining a reference interval of the in-orbit single event upset rate of the device. According to the method, the reference interval of the in-orbit single event upset rate of the device, especially the commercial device, can be obtained, and the model selection of the aerospace device is effectively guided.

Description

technical field [0001] The invention relates to a method for estimating the reference interval of the on-orbit single-event turnover rate of a device, and belongs to the technical field of aerospace integrated circuit anti-space single-event effect verification technology. Background technique [0002] The space radiation environment contains a large number of particles (electrons, neutrons, protons and heavy ions) and rays. The interaction between these radiation particles and semiconductor devices will cause single event effects, which will disturb or permanently fail the state of semiconductor devices, thereby inducing spacecraft failures. Before aerospace devices are applied to aerospace equipment, the anti-single event performance of aerospace devices needs to be evaluated on the ground. On the ground, heavy ion accelerators are usually used to simulate single event effects, and the single event turnover error rate can be obtained under specific space radiation conditio...

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Problems solved by technology

[0003] (1) Single event flipping saturation cross section (σ sat ), single event upset LET threshold (LET th ) and other parameters are more difficult to obtain, and the accuracy of the obtained data is not high

[0004] (2) It is generally believed that the σ-LET curve obeys the Weibull distribution. At present, the fitting of the single-particle Weibull curve mostly adopts the visual fitting method, and the curve fitting accuracy is not high

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