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Laser crystallizing method for polycrystalline silicon film by adopting technology of back insulating layer

A polysilicon thin film, laser crystallization technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of narrowing of the process window, reduced device performance, interface damage, etc., to achieve a wide process window, easy to implement, The effect of improving performance

Inactive Publication Date: 2012-09-05
NANKAI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In this way, it is necessary to accurately grasp the etching time and other process parameters, otherwise it will cause damage to the underlying polysilicon, which not only narrows the process window and increases the difficulty of the preparation process, but also in the process of etching off the insulation layer. more or less also affects the underlying polysilicon surface
For example, if applied to thin film transistors, the interface between the active layer and the gate insulating layer will be damaged, reducing device performance

Method used

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  • Laser crystallizing method for polycrystalline silicon film by adopting technology of back insulating layer
  • Laser crystallizing method for polycrystalline silicon film by adopting technology of back insulating layer
  • Laser crystallizing method for polycrystalline silicon film by adopting technology of back insulating layer

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Embodiment 1

[0027] The preparation of laser crystallized polysilicon thin film using back insulation layer technology, the steps are as follows:

[0028] 1), using Corning 1737 glass substrate, adopting plasma-enhanced chemical vapor method to deposit a 100nm thick silicon oxide film barrier layer on the front surface of the glass substrate;

[0029] 2), on the silicon oxide film barrier layer, deposit a 100nm thick amorphous silicon film as a crystallization precursor by means of low pressure chemical vapor deposition (LPCVD);

[0030] 3), on the back of the above-mentioned glass substrate, deposit a 0.5 μm thick amorphous silicon film insulation layer by low-pressure chemical vapor deposition (LPCVD);

[0031] 4) Scan the front surface of the amorphous silicon film with a double frequency YAG laser, the wavelength used is 532nm, the pulse frequency is 10Hz, the beam diameter is 5mm, and the single pulse energy density is 320mJ / cm 2 , the polysilicon surface is formed after the crystall...

Embodiment 2

[0040] The preparation of laser crystallized polysilicon thin film using back insulation layer technology, the steps are as follows:

[0041]1), using Corning 1737 glass substrate, adopting plasma-enhanced chemical vapor method to deposit a 100nm thick silicon oxide film barrier layer on the front surface of the glass substrate;

[0042] 2), on the silicon oxide film barrier layer, deposit a 100nm thick amorphous silicon film as a crystallization precursor by means of low pressure chemical vapor deposition (LPCVD);

[0043] 3), on the back of the above-mentioned glass substrate, deposit a 1.0 μm thick amorphous silicon film insulation layer by low-pressure chemical vapor deposition (LPCVD);

[0044] 4) Scan the front surface of the amorphous silicon film with a double frequency YAG laser, the wavelength used is 532nm, the pulse frequency is 10Hz, the beam diameter is 5mm, and the single pulse energy density is 320mJ / cm 2 , the polysilicon surface is formed after the crystalli...

Embodiment 3

[0050] The preparation of laser crystallized polysilicon thin film using back insulation layer technology, the steps are as follows:

[0051] 1), using Corning 1737 glass substrate, adopting plasma-enhanced chemical vapor method to deposit a 100nm thick silicon oxide film barrier layer on the front surface of the glass substrate;

[0052] 2), on the above silicon oxide barrier layer, deposit a 100nm thick amorphous silicon film as a crystallization precursor by means of low pressure chemical vapor deposition (LPCVD);

[0053] 3), on the back of the above-mentioned glass substrate, deposit a 1.5 μm thick amorphous silicon film insulation layer by low-pressure chemical vapor deposition (LPCVD);

[0054] 4) Scan the surface of the amorphous silicon thin film on the front side with a double frequency YAG laser. The wavelength used is 532nm, the pulse frequency is 10Hz, the beam diameter is 5mm, and the single pulse energy density is 320mJ / cm 2 , the polysilicon surface is formed...

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Abstract

The invention provides a laser crystallizing method for a polycrystalline film by adopting technology of a back insulating layer. The method comprises the following steps: depositing a barrier layer on the front surface of a glass substrate; depositing a crystallized precursor on the barrier layer; depositing an amorphous silicon film insulating layer on the back surface of the glass substrate; scanning the surface of the crystallized precursor on the front surface of the glass substrate by using a laser to form a polycrystalline silicon surface after crystallization; spinning a layer of photoresist on the polycrystalline silicon surface; removing the amorphous silicon insulating layer on the back surface of the substrate with Freckle reagent by using a wet etching method; and dipping a sample in glue-dispenser to remove the photoresist on the surface of the polycrystalline silicon. The method has the advantages that the performance of the laser crystallized polycrystalline silicon can be effectively improved with simple process, wide process window and easy implementation, and the formation of the polycrystalline silicon cannot be impacted; and the manufactured polycrystalline silicon film can be widely applied to preparation of polycrystalline silicon film transistors, photoelectric devices of displays, planar array sensors, panel display substrates and the like, and has important application value.

Description

technical field [0001] The invention relates to a preparation technology of a polysilicon film material, in particular to a method for laser crystallizing a polysilicon film by adopting a back insulation layer technology. Background technique [0002] In view of the high mobility of thin film polysilicon (tens of cm 2 / V.s even hundreds of cm 2 / V.s), as well as high photoelectric response efficiency and stability, have been widely used in microelectronic and optoelectronic devices such as active addressing substrates for flat panel displays and high-efficiency and long-life thin-film solar cells. High-quality polysilicon materials are the basis for obtaining good performance devices, and the key to polysilicon technology lies in its crystallization method. The existing crystallization methods mainly include high-temperature solid-phase crystallization (SPC), laser crystallization (ELA) and metal-induced crystallization. chemical (MIC). These three methods have their own ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/20H01L21/268H01L21/312
Inventor 李娟尹春建熊绍珍杨明吴春亚孟志国
Owner NANKAI UNIV