Unlock instant, AI-driven research and patent intelligence for your innovation.

Capacitance type microphone without electret layer

A technology of capacitive microphone and electret layer, which is applied in the field of microphones, can solve the problems of not being able to improve performance reliability, not being able to guarantee 100% sensitivity, and unstable performance, etc., to achieve high reliability, good durability, and quality stable effect

Inactive Publication Date: 2013-06-05
无棣鑫岳化工集团有限公司
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The traditional electret condenser microphone has the following disadvantages: the electret charge storage life is very sensitive to temperature, and the performance is also affected by humidity and time, and the performance is very unstable. Therefore, the electret layer has become a traditional electret capacitor. short board
Although these inventions can reduce the sensitivity to high temperature during soldering, they cannot 100% guarantee that the sensitivity will not be affected in any way. Even if they can pass the reflow soldering level, they cannot improve the reliability of performance affected by temperature, humidity and time. question

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Capacitance type microphone without electret layer
  • Capacitance type microphone without electret layer
  • Capacitance type microphone without electret layer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0017] figure 2 (b) is figure 2 One possible integration of (a), figure 2 The driver chip 2, the charge pump 17 and the bias resistor 16 of high resistance value in (a) are integrated in the driver bias chip 18, figure 2 (c) is figure 2 (b) Schematic diagram of the structure of a typical implementation. figure 2 (c) is figure 2 One possible implementation of (b), but not the only one. The chip may not only be a two-wire chip, but also a three-wire, four-wire (typically digital)... .

[0018] Such as figure 2 As shown, a condenser microphone without an electret layer includes: a driver chip 2, a sound channel 3, a metal connection short ring 4, a diaphragm 5, an insulating isolation ring 6, an air gap 7, an electret layer 8, a back Pole plate 9, metal connecting ring 11, metal shell 12, printed circuit board 13, capacitor structure 14, DC blocking capacitor 15, bias resistor 16, charge pump 17, drive bias chip 18.

[0019] One side of the diaphragm 5 is isolated...

Embodiment 2

[0022] Such as image 3 shown, with figure 2 Compared with the shown embodiment 1, only the positions of the capacitor structure 14 and the DC blocking capacitor 15 are exchanged, which is shown in the specific structure as:

[0023] A condenser microphone without an electret layer, comprising: a driver chip 2, a sound channel 3, a metal connection short ring 4, a diaphragm 5, an insulating isolation ring 6, an air gap 7, an electret layer 8, and a back plate 9 , Metal connection high ring 11, metal shell 12, printed circuit board 13, capacitor body structure 14, DC blocking capacitor 15, bias resistor 16, charge pump 17, drive bias chip 18.

[0024] One side of the diaphragm 5 is isolated from the back plate 9 by an insulating spacer ring 6, an air gap 7 is formed between the diaphragm 5 and the back plate 9, the diaphragm 5, the insulating spacer ring 6, the air gap 7 and the back plate 9 form a capacitor structure 14 . The driving bias chip 18 includes the driving chip ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a capacitance type microphone without an electret layer, comprising a capacitor structure, a drive chip, a sound channel, a metal low connecting ring, a diaphragm, an insulated isolating ring, an air gap, a back electret board, an air gap exhaust port, a metal high connecting ring, a metal shell, a printed circuit board, a bridging capacitor, a biasing resistor, a charge pump and a drive biasing chip. In the invention, because the electret layer is removed, compared with a traditional electret capacitance type microphone, the capacitance type microphone without the electret layer has the technical characteristics of high reliability, stable quality, good durability, no influence on properties from temperature, humidity and time and strong heat resistance and can bear high-temperature reflow soldering at 260 DEG C without any change on the sensitivity.

Description

technical field [0001] The invention relates to a microphone, in particular to a condenser microphone with an electret layer removed. Background technique [0002] Traditional electret condenser microphones include 2-wire, 3-wire, and 4-wire structures. Taking the 2-wire structure as an example, its typical circuit is as follows: figure 1 As shown in (a), the corresponding structure is as figure 1 (b) shown. Depend on figure 1 It can be seen that the traditional electret condenser microphone structure mainly includes two parts: an electret structure and a driver chip. The electret structure mainly includes four parts: the diaphragm, the electret layer, the back plate, and the air gap between the diaphragm and the electret layer. The electret layer is composed of specially treated polymer materials, which have solidified charges, solidified positive charges and solidified negative charges. An electret layer is electroplated on the back plate. The back plate is connected...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H04R19/01
Inventor 陈锋奚剑雄
Owner 无棣鑫岳化工集团有限公司
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More