Unlock instant, AI-driven research and patent intelligence for your innovation.

Method for controlling semiconducting speed and degree of metal oxide material surface

A technology of oxides and metals, which is applied in the field of controlling the surface semiconducting speed and degree of high resistivity metal oxide materials, which can solve the problems of unfavorable expected products, difficult control of semiconducting speed and degree, and achieve easy operation , the effect is obvious

Inactive Publication Date: 2010-12-15
UNIV OF SCI & TECH BEIJING
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

A new metallization method for the surface of high-resistivity metal oxide materials is proposed [a method for surface electroplating of high-resistivity metal oxide materials (ZL200710118076.4)]. In this method, the surface of oxide materials needs to be first Semiconducting, but the speed and degree of semiconducting are not easy to control, which is not conducive to obtaining the expected products

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for controlling semiconducting speed and degree of metal oxide material surface
  • Method for controlling semiconducting speed and degree of metal oxide material surface

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0012] Select 10 sintered nickel-copper-zinc ferrite ceramic discs with a diameter of 1 cm and a thickness of 1 mm, and the ferrite composition is Ni 0.3 Zn 0.5 Cu 0.2 Fe 2 o 4 , the molar percentage of iron element is 28.6%. Put the nickel-copper-zinc ferrite ceramic disk and the steel ball with a diameter of 0.5mm in the hanging basket, immerse the hanging basket in the sodium sulfate aqueous solution, use the titanium basket as the anode, and electrolyze the aqueous solution under the condition of vibration. The surface of the bulk material is modified by atomic hydrogen conductance to make the surface semiconducting. The process parameters are as follows:

[0013] Sodium Sulfate (Na 2 SO 4 ) aqueous solution 41.7 g / L

[0014] Na 2 EDTA aqueous solution 1.86 g / L

[0015] Cathode current density 2 amps / square decimeter

[0016] Temperature 20°C

[0017] After processing for 5 minutes, 10 minutes, 15 minutes, 20 minutes and 30 minutes respectively, take out the fe...

Embodiment 2

[0019] Select 10 sintered nickel-copper-zinc ferrite ceramic discs with a diameter of 1 cm and a thickness of 1 mm, and the ferrite composition is Ni 0.3 Zn 0.5 Cu 0.2 Fe 2 o 4 , the molar percentage of iron element is 28.6%. Put the nickel-copper-zinc ferrite ceramic disk and the steel ball with a diameter of 0.5mm in the hanging basket, immerse the hanging basket in the sodium sulfate aqueous solution, use the titanium basket as the anode, and electrolyze the aqueous solution under the condition of vibration. The surface of the bulk material is modified by atomic hydrogen conductance to make the surface semiconducting. The process parameters are as follows:

[0020] Sodium Sulfate (Na 2 SO 4 ) aqueous solution 41.7 g / L

[0021] Na 2 EDTA aqueous solution 3.73 g / L

[0022] Cathode current density 2 amps / square decimeter

[0023] Temperature 20°C

[0024] After processing for 5 minutes, 10 minutes, 15 minutes, 20 minutes, 30 minutes, and 40 minutes, take out the fe...

Embodiment 3

[0026] As mentioned above, select 10 sintered nickel-copper-zinc ferrite ceramic discs, the diameter is 1 cm, the thickness is 1 mm, and the ferrite composition is Ni 0.3 Zn 0.5 Cu 0.2 Fe 2 o 4 , the molar percentage of iron element is 28.6%. Put the nickel-copper-zinc ferrite ceramic disk and the steel ball with a diameter of 0.5mm in the hanging basket, immerse the hanging basket in the sodium sulfate aqueous solution, use the titanium basket as the anode, and electrolyze the aqueous solution under the condition of vibration. The surface of the bulk material is modified by atomic hydrogen conductance to make the surface semiconducting. The process parameters are as follows:

[0027] Sodium Sulfate (Na 2 SO 4 ) aqueous solution 41.7 g / L

[0028] Na 2 EDTA aqueous solution 11.16 g / L

[0029] Cathode current density 2 amps / square decimeter

[0030] Temperature 20°C

[0031] After processing for 5 minutes, 10 minutes, 15 minutes, 20 minutes, 30 minutes, and 40 minute...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Diameteraaaaaaaaaa
Login to View More

Abstract

The invention belongs to the technical field of metal oxide material surface treatment, and in particular relates to a method for controlling the semiconducting speed and the semiconducting degree of a high-resistivity metal oxide material surface. The method is characterized by controlling the semiconducting speed and the semiconducting degree by adding an additive in an atomic hydrogen-induced semiconducting process, namely adding the additive of Na2EDTA into electrolyte solution in the process of performing atomic hydrogen treatment on the metal oxide material surface, and controlling the metalizing speed and the metalizing degree of the metal oxide material surface by changing the amount of the additive. The method has the advantages of obvious effect and convenient operation by controlling the semiconducting speed and the semiconducting degree of the metal oxide material surface are controlled by controlling the amount of the additive.

Description

technical field [0001] The invention belongs to the technical field of surface treatment of metal oxide materials, in particular to a method for controlling the surface semiconducting speed and degree of high resistivity metal oxide materials. Background technique [0002] The surface metallization of high-resistivity metal oxide materials has become a particularly important process technology in high-tech industries, such as high-frequency electronic components, multilayer chip packaging, microelectronics and precision machinery manufacturing. A new metallization method for the surface of high-resistivity metal oxide materials is proposed [a method for surface electroplating of high-resistivity metal oxide materials (ZL200710118076.4)]. In this method, the surface of oxide materials needs to be first Semiconducting, but the speed and degree of semiconducting are not easy to control, which is not conducive to obtaining the expected products. Contents of the invention [0...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C25D5/54
Inventor 曹江利王兰花
Owner UNIV OF SCI & TECH BEIJING