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One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer

A silicon carbide and silicon carbide source technology, applied in single crystal growth, single crystal growth, crystal growth, etc., can solve problems such as difficulties in large single crystals

Active Publication Date: 2013-10-16
沃孚半导体公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, it remains difficult to obtain large single crystals that can be used to fabricate large surface area devices for high voltage, high current applications

Method used

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  • One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer
  • One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer
  • One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer

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Embodiment Construction

[0051] The present invention is a silicon carbide wafer comprising a single polytype single crystal, having a diameter greater than 75 mm (3 inches) and less than 125 mm (5 inches), a resistivity greater than 10,000 ohm centimeters (Ω-cm), and a micropipe density less than 200 per square centimeter (cm -2 ), the total concentration of shallow level dopants is less than 5E16 (5×10 16 ) per cubic centimeter (cm -3 ).

[0052] As is well known to those skilled in the art, the term "single crystal" (or its synonym, "single crystal") applies especially to crystals of the dimensions described and claimed herein, even when there are small areas, domains, or Quantities of other polytypes of silicon carbide can also be applied correctly to such large crystals. Therefore, large wafers of high quality crystals, where a single polytype predominates, are aptly referred to herein as "single crystals".

[0053] In a preferred embodiment, the diameter of the wafer is about 100 mm or 4 inc...

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Abstract

The invention relates to a 100mm high-purity semi-insulating single crystal silicon carbide wafer. Monocrystalline silicon carbide wafers of a single polytype are disclosed, having a diameter greater than 75 mm and less than 125 mm, a resistivity greater than 10,000 ohm-cm, and a micropipe density less than 200 cm -2 , and the total concentration of shallow level dopants is less than 5E16cm -3 .

Description

[0001] This application is a divisional application with an application date of June 14, 2005, an application number of 200580021074.2, and an invention title of "100 mm high-purity semi-insulating single-crystal silicon carbide wafer". [0002] This invention is related to commonly assigned US Patent No. 6814801 and US Publication Nos. 20050022727 and 2005022724. The present invention is also related to those inventions set forth in commonly assigned US Pat. technical field [0003] The present invention relates to semi-insulating silicon carbide single crystals, and in particular, to methods of forming high-purity semi-insulating silicon carbide single crystal wafers having a diameter of at least 100 millimeters (mm). Because of the relationship between imperial and metric units (eg, 25.4 millimeters = 1 inch), such wafers are also referred to as "4 inch" wafers. Background technique [0004] The comprehensive electronic and physical properties of silicon carbide (SiC) ma...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/36H01L21/205C30B23/00C30B33/00H01L21/324
CPCC30B23/00C30B29/36H01L21/324C30B33/00C30B23/025Y10T117/10Y10T428/21Y10T428/31Y10T117/1004Y10T117/1016
Inventor J·R·杰尼
Owner 沃孚半导体公司