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Method for manufacturing TFT substrate for current control

A manufacturing method and current control technology, applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve problems such as the inability to achieve high frequency

Inactive Publication Date: 2010-12-15
IDEMITSU KOSAN CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In this way, in order to increase the frequency of AC drive, it is necessary to increase the frequency of scanning, and there is a problem that high frequency cannot be achieved.

Method used

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  • Method for manufacturing TFT substrate for current control
  • Method for manufacturing TFT substrate for current control
  • Method for manufacturing TFT substrate for current control

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no. 2 Embodiment approach

[0235] Figure 17 It is a block diagram showing the configuration of the organic EL display device according to the first embodiment of the present invention.

[0236] exist Figure 17Among them, the organic EL display device 1a as an electro-optical device includes a data line drive circuit 11, a scan line drive circuit 12, a power line control circuit 13a, a current measurement circuit 15, and a current control TFT substrate 100a (abbreviated as "TFT" as appropriate). substrate 100a"). In addition, m (column: m is a natural number)×n (row: n is a natural number) pixels 10 a are arranged in an array on the TFT substrate 100 .

[0237] The data line drive circuit 11 is connected to each pixel 10a through the first data line 111, the second data line 112...the mth data line 113 as a medium. The data line drive circuit 11 outputs a data signal to each pixel 10a.

[0238] In addition, the scanning line driving circuit 12 is connected to each pixel 10 a through the first scann...

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Abstract

A method for manufacturing TFT substrate for current control comprises: laminating a conductor layer and a first resist layer, forming scan lines, switching tube grids and grid lines by a first mask; laminating the switching tube grids insulation film; laminating an active layer having amorphous Si or polycrystalline Si or oxide semiconductor layer, a conductor layer and a second resist layer, forming data lines, switching tube source electrode lines, source electrodes, channel portions, drain electrodes, drain electrode lines, driving tube grid lines and gate electrodes; laminating the driving tube grids insulation film; laminating an oxide semiconductor layer and a third resist layer, forming a driving pipe active layer by a third mask; laminating an oxide conductor layer and a fourth resist layer, forming EL driving lines, driving tube source electrode lines, source electrodes, channel portions, drain electrodes, drain electrode lines and pixel electrodes; and a laminating insulation protective film and a fifth resist layer, and exposing scan line used bosses, data line used bosses, EL driving line used bosses and pixel electrodes by a fifth mask.

Description

[0001] This application is a divisional application with application number 200780013174.X (application date: 2007.4.10; invention name: electro-optical device, TFT substrate for current control and manufacturing method thereof). technical field [0002] The present invention relates to an electro-optical device, a TFT substrate for current control, and a manufacturing method thereof. In particular, by adopting the electro-optic device, the TFT substrate for current control and the manufacturing method thereof, the alternating current can be directly controlled, the high-frequency alternating current can be output, and the large power can be stably output, thereby reducing the manufacturing cost. Background technique [0003] An organic EL display device is attracting attention as a next-generation display device and solid-state lighting that will replace an LCD (Liquid Crystal Display) display device. The reason for this is that since the organic EL (Electronic Luminescence...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/77H01L27/32H01L27/02
CPCG09G3/3233G09G2320/043H01L27/1288H01L29/7869G09G2320/029G09G2300/0852G09G2300/0417H01L27/1255H01L29/45G09G2320/0295H01L27/1214H01L27/1225G09G2300/0842H01L27/124H10K59/131
Inventor 井上一吉矢野公规田中信夫
Owner IDEMITSU KOSAN CO LTD
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