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Capacitive mems switch and method of fabricating the same

A micro-electro-mechanical system and capacitive technology, applied in the direction of electric switches, electronic switches, generators/motors, etc., can solve problems such as difficult production and integrated silicon chips, and achieve the effect of meeting cost, low cost and high efficiency

Active Publication Date: 2012-06-13
XIAN YISHEN OPTOELECTRONICS TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, in the existing technology and industrial practice so far, most of the design and manufacturing methods are based on large-scale MEMS processing platforms. This processing platform separates the manufacturing process of MEMS from the CMOS wafer process, making them difficult to produce and integrate together. on the same silicon wafer

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  • Capacitive mems switch and method of fabricating the same
  • Capacitive mems switch and method of fabricating the same
  • Capacitive mems switch and method of fabricating the same

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Embodiment Construction

[0031] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0032] Figure 1a A stereoscopic view of a capacitive MEMS switch according to an embodiment of the present invention; Figure 1b It is a cross-sectional view of the capacitive MEMS switch according to an embodiment of the present invention. The capacitive MEMS switch 10 includes: a semiconductor substrate 100 and a suspended composite beam 200 ,...

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Abstract

The present invention discloses a capacitive MEMS switch and a method of fabricating the same. The capacitive MEMS switch (10) comprises: a semiconductor substrate comprising: a driving circuitry; and a first bottom electrode, a first bottom conductor and a second bottom conductor, configured on top of the semiconductor substrate, wherein the first bottom electrode is electrically connected to the driving circuitry; and a suspended composite beam anchored on top of the semiconductor substrate via a first arm portion, comprising: a first top electrode, a top conductor and a dielectric layer. The capacitive MEMS switch has an effective and reliable micro electrical mechanical structural design which can be compatible with CMOS wafer process so that it can be produced and integrated with CMOS microdevices on one silicon wafer, and it utilizes available solid-state film material and fabrication process so as to meet the requirement of low-cost and high-efficiency CMOS integrity and MEMS.

Description

technical field [0001] The present invention relates to a micro-electromechanical system (Micro Electrical Mechanical System, MEMS for short) switch, in particular to a capacitive MEMS switch and a manufacturing method thereof. Background technique [0002] Capacitive (MEMS) switches are compatible with traditional solid-state switching devices, such as: Positive-Intrinsic-Negative (PIN) semiconductor diodes and various Field Effect Transistors (FETs). ability to compete. The use of capacitive MEMS switches has certain advantages in terms of performance and cost. It has the potential to provide high transmission current, low transmission line loss and distortion, and has low manufacturing and application costs. [0003] A capacitive MEMS switch is a miniature device whose active element is a thin conductive film suspended above a substrate and can move under the action of electrostatic forces generated when an electric field is applied between the substrate and the film. T...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03K17/96B81B7/02B81C1/00
CPCB81B2201/014B81C1/00246H01H1/0036B81C2203/0714H01H59/0009
Inventor 河·H·黄
Owner XIAN YISHEN OPTOELECTRONICS TECH CO LTD