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Position control method and device for silicone liquid level of czochralski crystal grower

A control method and control device technology, applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problem that the accuracy cannot be effectively controlled, and achieve the effect of ensuring crystal quality

Inactive Publication Date: 2011-03-02
ZHEJIANG YUHUI SOLAR ENERGY SOURCE
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in actual operation, the motor is manually driven to control the following ratio of the crucible, and its accuracy cannot be effectively controlled.

Method used

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  • Position control method and device for silicone liquid level of czochralski crystal grower
  • Position control method and device for silicone liquid level of czochralski crystal grower

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Embodiment Construction

[0024] The Czochralski method is also called the J.Czochralski method. This method was a crystal growth method established by Czochralski in 1917. The equipment and process for growing single crystals by the Czochralski method are relatively simple, easy to realize automatic control, high production efficiency, and easy to prepare large-diameter single crystals. It is easy to control the impurity concentration in the single crystal, and can prepare low resistivity single crystal. It includes the following stages: polycrystalline material loading, evacuation, polysilicon melting, neck-to-shoulder growth, equal-diameter growth, tail crystal growth, and crystal cooling. Among them, the follow-up ratio of the crucible and The quality of monocrystalline silicon is closely related. In the embodiment of the present invention, the quality of single crystal silicon is controlled by controlling the following ratio of the crucible.

[0025] The laser rangefinder is an instrument that u...

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Abstract

The embodiment of the invention discloses a position control method for the silicone liquid level of a czochralski crystal grower, which comprises the following steps: A, storing a target distance value between an observation window of the czochralski crystal grower and the silicone liquid level in advance; B, measuring the actual distance value between the observation window and the silicone liquid level; and C, comparing the target distance value with the actual distance value to obtain the comparative value, and controlling the motor speed according to the comparative value. In the method of the embodiment of the invention, the motor speed is adjusted in real time by detecting the distance between the window and the silicone liquid level, thereby controlling the following ratio of a crucible, keeping the single crystals in the growing process in an appropriate growing environment, and ensuring the crystal quality. The embodiment of the invention also discloses a position control device for the silicone liquid level of the czochralski crystal grower.

Description

technical field [0001] The invention relates to the field of single crystal silicon preparation, and more specifically relates to a method and device for controlling the silicon liquid level position of a Czochralski single crystal furnace. Background technique [0002] The Czochralski method is also called the J.Czochralski method. This method was a crystal growth method established by Czochralski in 1917. The equipment and process for growing single crystals by the Czochralski method are relatively simple, easy to realize automatic control, high production efficiency, and easy to prepare large-diameter single crystals. It is easy to control the impurity concentration in the single crystal, and can prepare low resistivity single crystal. [0003] The Czochralski process is as follows: firstly, put the high-purity polysilicon raw material into the high-purity quartz crucible, and melt it through the high temperature generated by the graphite heater; Then insert a single si...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/20C30B29/06
Inventor 汤旋
Owner ZHEJIANG YUHUI SOLAR ENERGY SOURCE
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