Unlock instant, AI-driven research and patent intelligence for your innovation.

Array substrate and manufacturing method thereof

A technology for array substrates and substrate substrates, which is applied in semiconductor/solid-state device manufacturing, optics, instruments, etc., can solve problems such as poor display, increased common voltage of common electrodes, and uneven common voltage, so as to improve display quality and increase Stability, the effect of avoiding public voltage rise

Active Publication Date: 2012-10-17
BOE TECH GRP CO LTD +1
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] During the research process of the technical solution of the present invention, the inventors found that the prior art has the following defects: on the array substrate, there are overlapping gaps between conductive patterns such as data lines, source electrodes, drain electrodes, gate electrodes, and common electrode lines. area, the parasitic capacitance formed at the overlapping area
When the data line is connected to the AC data voltage, it will be coupled to the common electrode line through the parasitic capacitance, which will affect the common voltage in the common electrode line. The moment each data line is connected to the data voltage will cause the common electrode line. When the common voltage jumps, when multiple data lines are connected to the data voltage sequentially, the common voltage will continue to rise, causing the common voltage of the common electrode to rise as a whole, or the common voltage of some areas is higher than that of other areas, resulting in the common voltage of the entire array substrate. uneven voltage
The change of the above-mentioned common voltage makes the rotation angle modulation of the liquid crystal inaccurate, which affects the display quality of the picture, and there will be display defects such as "crosstalk" and "flicker (flicker)"

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Array substrate and manufacturing method thereof
  • Array substrate and manufacturing method thereof
  • Array substrate and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] figure 1 It is a partial top view structural schematic diagram of the array substrate provided by Embodiment 1 of the present invention. The array substrate includes a base substrate 1 on which data lines 2 and gate scanning lines 3 intersecting horizontally and vertically are formed. The data lines 2 and the gate scanning lines 3 surround a plurality of pixel units arranged in a matrix form, figure 1 Shown in is a schematic top view structural diagram of some pixel units, the area where each pixel unit is located is the display area, and the part outside the display area is the edge area.

[0027] Each pixel unit is provided with a first TFT switch and a pixel electrode 4 . The first TFT switch specifically includes a first gate electrode 6 , a first active layer 7 , a first source electrode 8 and a first drain electrode 9 . The first gate electrode 6 is formed in the same layer as the gate scanning line 3 and connected to each other. The first source electrode 8 a...

Embodiment 2

[0044] Figure 4 It is a partial top view structural schematic diagram of the array substrate provided by Embodiment 2 of the present invention. This embodiment can be based on Embodiment 1. Further, a jumper 10 is provided on the array substrate, and the jumper 10 is connected to the common electrode line 5 in adjacent pixel units; the common electrode line 5 is connected to the discharge electrode through the jumper 10. structure. The non-directly connected common electrode lines 5 on the array substrate can be connected to each other by setting jumper wires 10 , thereby increasing the connection points between the common electrode lines 5 and making the common voltage in the common electrode lines 5 in the entire array substrate more uniform.

[0045] The position of the jumper 10 depends on the position of the common electrode line 5 . In this embodiment, the common electrode lines 5 are formed on the same layer as the gate scanning lines 3 and are parallel to the gate s...

Embodiment 3

[0055] Figure 5 It is a flowchart of a method for manufacturing an array substrate provided in Embodiment 3 of the present invention, and the method specifically includes the following steps:

[0056] Step 501, depositing a gate metal thin film on the base substrate 1;

[0057] Step 502, use a monotone mask to pattern the gate metal film to form a gate scanning line 3, a first gate electrode 6, a common electrode line 5, a light blocking strip 24, a first terminal 171 of a capacitor and a second The pattern of the gate electrode 13, the gate scanning line 3, the first gate electrode 6, the common electrode line 5 and the light shielding bar 24 are formed in the display area, and the first terminal 171 of the capacitor and the second gate electrode 13 are formed between the display area in the outer edge region;

[0058] In the pattern formed in step 502, the first gate electrode 6 is connected to the gate scanning line 3, the common electrode line 5 is integrally formed wit...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to an array substrate and a manufacturing method thereof. The array substrate comprises an underlay substrate, data lines and grid scanning lines, which are horizontally and longitudinally crossed, are formed on the underlay substrate and surround to form a plurality of pixel units arranged in a matrix form, a first TFT (Thin Film Transistor) switch and a pixel electrode arearranged in each pixel unit, and a common electrode line is also formed on the underlay substrate. The array substrate also comprises a discharge structure connected with the common electrode line, and the discharge structure comprises a capacitor, a second TFT switch and a discharge power line; the capacitor is connected between the common electrode line and a second grid electrode of the secondTFT switch in series, a second source electrode of the second TFT switch is connected to the common electrode line, and a second drain electrode of the second TFT switch is connected with the discharge power line. The invention can discharge the common electrode line when the voltage of the common electrode line exceeds certain level by using the operating principle of the TFT switches in the discharge structure, and thus, the stability of common voltage is increased.

Description

technical field [0001] The invention relates to liquid crystal display technology, in particular to an array substrate and a manufacturing method thereof. Background technique [0002] Thin Film Transistor-Liquid Crystal Display (hereinafter referred to as: TFT-LCD) has the characteristics of small size, low power consumption, and no radiation, and occupies a dominant position in the current flat panel display market. [0003] TFT-LCD usually includes an array substrate and a color filter substrate arranged in opposite cells, and liquid crystals are filled between them. The array substrate includes a base substrate, on which data lines and gate scanning lines intersecting horizontally and vertically are formed, surrounding a plurality of pixel units forming a matrix. Each pixel unit is provided with a TFT switch and a pixel electrode, and the TFT switch includes a gate electrode, an active layer, a source electrode and a drain electrode. The gate electrode is connected to ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G02F1/1362G02F1/1368H01L21/82
Inventor 王峥
Owner BOE TECH GRP CO LTD