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Detection methods for ashing process and electrical characteristics of semiconductor device

A detection method and semiconductor technology, which is applied in semiconductor/solid-state device testing/measurement, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve the problems of long cycle time and inability to adjust the process in time, so as to save costs and shorten the research and development cycle. Effect

Inactive Publication Date: 2012-12-12
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In order to solve the problems in the prior art in the detection of the ashing process and the detection of electrical characteristics, the cycle is long and the process cannot be adjusted in time, the present invention provides a method for the ashing process and electrical characteristics of semiconductor devices

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  • Detection methods for ashing process and electrical characteristics of semiconductor device
  • Detection methods for ashing process and electrical characteristics of semiconductor device
  • Detection methods for ashing process and electrical characteristics of semiconductor device

Examples

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Embodiment 1

[0037] The monitoring method of the ashing process of the semiconductor device of the present embodiment includes:

[0038] First, at least two semiconductor substrates are provided, and the surfaces of the at least two semiconductor substrates each have a first concentration of dopant ions;

[0039] Specifically, refer to image 3 As shown, the semiconductor substrate 100 may be, but not limited to, a silicon substrate, and has a first concentration of dopant ions 200 on the surface of the semiconductor substrate 100, and the dopant ions 200 may be boron (B), indium (In), Phosphorus (P) or arsenic (As) ions;

[0040] Secondly, ashing the at least two semiconductor substrates to different degrees, and forming oxide layers with different thicknesses on the at least two semiconductor substrates;

[0041] Wherein, the semiconductor device may be a wafer, and the ashing process may be an ashing process for forming source and drain electrodes in a front-end (FOEL) process of wafe...

Embodiment 2

[0052] This embodiment provides a method for detecting electrical characteristics of a semiconductor device, including:

[0053] Firstly, a semiconductor substrate is provided, and part of the semiconductor substrate is covered by a photoresist layer;

[0054] Wherein, a gate structure and a shallow trench isolation region may also be formed on the semiconductor substrate, and the photoresist layer may be a mask layer in an ion implantation process;

[0055] Optionally, the semiconductor device is a wafer.

[0056] Secondly, the photoresist layer is removed by an ashing process, and an oxide layer is formed on the exposed part of the semiconductor substrate;

[0057] Optionally, removing the photoresist layer by using an ashing process is a process of forming source and drain electrodes in the front-end process of wafer formation;

[0058] Wherein, the exposed part of the semiconductor substrate is the part that needs to be ion-implanted to form the source and drain;

[005...

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Abstract

The invention provides detection methods for the ashing process and the electrical characteristics of a semiconductor device, which are characterized in that whether the ashing process is qualified or not and whether the electrical characteristics of the semiconductor device meet the demand or not are judged through generating an oxide layer in the ashing process and testing the thickness of the semiconductor.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, and more specifically, to a method for detecting an ashing process of a semiconductor device and a method for detecting electrical characteristics. Background technique [0002] With the continuous development of semiconductor technology, the size of semiconductor devices tends to be miniaturized. When the device size is developed below 90 nanometers, the ashing process will affect the electrical characteristics of semiconductor devices (such as saturation current, shutdown current, etc.) The impact is also becoming more and more important, so when researching and developing new processes involving ashing, the quality of ashing has also become a problem that manufacturers must consider. [0003] In the prior art, testing the electrical characteristics of a semiconductor device (such as a wafer) must wait until the semiconductor device flows to the back end (BEOL), that is, whe...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/66B07C5/04H01L21/28H01L21/3105H01L21/316
Inventor 曾德强吴永皓段晓斌杨荣华
Owner SEMICON MFG INT (SHANGHAI) CORP