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Base plate applied to flexible electronic device and manufacture method thereof

A technology of electronic devices and flexible substrates, which is applied in the field of stress-regulated substrates and its manufacturing, and can solve problems such as curling, uneven stress formed on plastic substrates, and warping and unevenness of flexible substrates.

Active Publication Date: 2012-11-28
IND TECH RES INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Although a flexible TFT device with good characteristics can be obtained by molding the plastic substrate on glass by coating method for TFT process, the uneven and even serious warping of the flexible substrate is caused by the asymmetric structure of the inner and outer sides of the plastic substrate, resulting in uneven stress. curl is not available

Method used

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  • Base plate applied to flexible electronic device and manufacture method thereof
  • Base plate applied to flexible electronic device and manufacture method thereof
  • Base plate applied to flexible electronic device and manufacture method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] [Example 1] Production of polyimide B1317-BAPPm (Si02 / BB37) / alumina / parylene / glass substrate

[0032] First, at room temperature, 3 grams of silicon dioxide (SiO) dissolved in dimethylacetamide (hereinafter referred to as DMAc) with a solid content of 20% 2 ) and 7 grams of B1317-BAPPm (BB) dissolved in DMAc with a solid content of 20% were put into the sample bottle. Next, 0.3 g of amino-containing silicone—3-(trimethoxysilyl)propylamine) was added, and stirred at room temperature for 30 minutes. After that, apply it on the glass coated with 100nm-thick parylene and 100nm-thick alumina with a doctor blade, and put it into an oven and bake it at 80°C and 150°C for 1 hour respectively to obtain the glass of the present invention. substrate. Parylene is prepared by thermal evaporation. Alumina (Al 2 o 3 ) is prepared by RF magnetron sputtering, the radio frequency power is 200W, the working pressure is 2mtorr, and the gas flow rate is 13sccm Ar. And the area of ​​al...

Embodiment 2

[0034] [Example 2] Production of polyimide B1317-BAPPm (SiO2 / BB37) / alumina / parylene / glass substrate

[0035] First, at room temperature, 3 g of silica (SiO 2 ) and 7 grams of B1317-BAPPm (BB) dissolved in DMAc with a solid content of 20% were put into the sample bottle. Next, 0.3 g of amino-containing silicone—3-triethoxysilylpropylamine (3-Triethoxysilylpropylamine) was added, and stirred at room temperature for 30 minutes. Afterwards, it is coated on the glass coated with 100nm parylene and 250nm alumina with a doctor blade, and baked in an oven at 80°C and 150°C for 1 hour respectively to obtain the substrate of the present invention. Parylene is prepared by thermal evaporation. Alumina (Al 2 o 3 ) is prepared by RF magnetron sputtering, the radio frequency power is 200W, the working pressure is 2mtorr, and the gas flow rate is 13sccm Ar. And the area of ​​aluminum oxide is larger than that of parylene.

Embodiment 3

[0036] [Example 3] Production of polyimide B1317-BAPPm (SiO2 / BB37) / alumina / parylene / glass substrate

[0037] First, at room temperature, 3 g of silica (SiO 2 ) and 7 grams of B1317-BAPPm (BB) dissolved in DMAc with a solid content of 20% were put into the sample bottle. Then, 0.3 g of aminopropyl-methyl-diethoxysilane (Aminopropyl-methyl-diethoxysilane) containing amino group was added, and stirred at room temperature for 30 minutes. Afterwards, it is coated on the glass coated with 100nm parylene and 450nm alumina with a doctor blade, and baked in an oven at 80°C and 150°C for 1 hour respectively to obtain the substrate of the present invention. Parylene is prepared by thermal evaporation. Alumina (Al 2 o 3 ) is prepared by RF magnetron sputtering, the radio frequency power is 200W, the working pressure is 2mtorr, and the gas flow rate is 13sccm Ar. And the area of ​​aluminum oxide is larger than that of parylene.

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Abstract

The invention relates to a base plate applied to a flexible electronic device, which comprises a support carrier, a first material layer, a second material layer and a flexible base plate, wherein the first material layer covers the support carrier by a first area; the second material layer covers the first material layer and the support carrier by a second area; the second area is larger than orequal to the first area; the flexible base plate covers the second material layer, the first material layer and the support carrier by a third area; the third area is larger than the second area; andthe density of the flexible base plate on the support carrier is larger than that of the first material layer on the support carrier. The invention also relates to a manufacture method of the base plate.

Description

technical field [0001] The invention relates to a substrate, in particular to a stress-regulating substrate and a manufacturing method thereof. Background technique [0002] Flexible displays have become the development trend of the new generation of novel displays, and the development of active flexible displays is the mainstream trend. The world's major R&D companies are stepping from the current heavy and fragile glass substrates to non-glass and lighter weight substrates. The development of flexible plastic substrate materials is moving towards active full-color TFT display panels. At present, there are three options for the development of active flexible display technologies: a-Si TFT, LPTS TFT and OTFT, and the display medium part includes EPD, ECD, LCD and EL. [0003] The choice of manufacturing method can be divided into batch type (batch type) and roll to roll (roll to roll). If you choose the batch type method for TFT device manufacturing, you can use existing TF...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/52H01L51/56
Inventor 吕奇明黄月娟曾永隆
Owner IND TECH RES INST