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Method of manufacturing semiconductor device and semiconductor device

A manufacturing method and semiconductor technology, which are applied in the fields of semiconductor/solid-state device manufacturing, semiconductor devices, and semiconductor/solid-state device components, etc., can solve the problems of wire breakage, the thickness of the pin portion 20 being too thin, and no record of wire height control, etc. Achieving the effect of improving cost and bonding reliability

Active Publication Date: 2015-07-01
RENESAS ELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, when a large load, ultrasonic waves, and the above-mentioned mechanical amplitude motion S are applied to obtain sufficient joint strength, as Figure 16 As shown, the thickness of the pin part 20 will become too thin and lead wires will break.
[0011] In addition, the aforementioned Patent Document 1 (Japanese Unexamined Patent Publication No. 2000-91372 ) does not describe the height control (thickness control) of the wire at the wire bonding portion during stitch bonding, even if the wire bonding technique described in the aforementioned Patent Document 1 is used , and the height control (thickness control) of the wire at the wire bonding part during stitch bonding cannot be performed

Method used

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  • Method of manufacturing semiconductor device and semiconductor device
  • Method of manufacturing semiconductor device and semiconductor device
  • Method of manufacturing semiconductor device and semiconductor device

Examples

Experimental program
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Effect test

Embodiment approach 1

[0121] figure 1 is a plan view showing an example of the structure of the semiconductor device according to Embodiment 1 of the present invention, figure 2 is to mean along figure 1 A cross-sectional view of the structure cut by line A-A is shown.

[0122] The semiconductor device in Embodiment 1 is a multi-pin resin-sealed semiconductor package mounted using a lead frame. In Embodiment 1, the following examples are listed: figure 1 A multi-pin QFP (Quad Flat Package: Quad Flat Package) 1 as shown will be described as an example of the aforementioned semiconductor device.

[0123] illustrate figure 1 , figure 2The structure of the shown QFP1 includes: a semiconductor chip 4 formed with a semiconductor integrated circuit; a plurality of inner leads (leads) 2a arranged radially around the semiconductor chip 4; a plurality of outer leads integrally formed with the inner leads 2a (outer lead) 2b; and wires 5 for electrically connecting electrode pads 4c, which are surfa...

Embodiment approach 2

[0188] Figure 23 is a cross-sectional view showing an example of the structure of a semiconductor device according to Embodiment 2 of the present invention, Figure 24 is expressed in Figure 23 An operation diagram of an example of the trajectory of the solder needle from the first bonding to the second bonding in the wire bonding of the part A of the assembly of the semiconductor device shown, Figure 25 is expressed in Figure 24 A timing chart showing an example of the height of the solder pin, bonding load, and ultrasonic waves in wire bonding. in addition, Figure 26 is expressed in Figure 23 A partial cross-sectional view showing an example of the structure of the tip portion of the solder pin used for wire bonding in the assembly of the semiconductor device shown, Figure 27 yes means Figure 26 A partially enlarged cross-sectional view of an example of the structure of part A shown, Figure 28 means using Figure 26 A partial cross-sectional view showing an ...

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Abstract

Height control of a capillary is performed in a stitch bonding (2nd bond) in a wire bonding, so that a thickness of a stitch portion can be controlled, thereby ensuring a bonding strength at the stitch portion and achieving an improvement in a bonding reliability. Also, the stitch portion has a thick portion, and a wire and a part (α portion) of a bonding region of an inner lead is formed to a lower portion of the thick portion, thereby sufficiently ensuring a thickness of the stitch portion and a bonding region.

Description

technical field [0001] The present invention relates to a manufacturing technique of a semiconductor device and a semiconductor device, and particularly relates to a technique for improving bonding strength of wires that can be effectively applied in a wire bonding process. technical background [0002] For example, in Japanese Patent Laid-Open No. 2000-91372 (Patent Document 1), it is described that in wire bonding, when a wire is wedge-bonded to the surface of a lead (lead), using The capillary of the first press down and the ring-shaped second press down around it form a flat part on the capillary by increasing the press down to enhance the bonding force with the surface of the lead. [0003] Patent Document 1: Japanese Patent Laid-Open No. 2000-91372 [0004] In wire bonding for electrically connecting electrode pads of a semiconductor chip and inner leads of a lead frame (lead frame) using metal wires, gold is mainly used as a material of the wires. However, since the...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/607H01L23/49
CPCH01L2924/14H01L2224/48247B23K20/007H01L2224/32245H01L2924/04953H01L2924/01005H01L2224/73265H01L2224/45015H01L2224/78302H01L2924/01074H01L24/85H01L2924/01046H01L24/97H01L2224/48599H01L24/78H01L2924/01029H01L2224/48227H01L2924/20753H01L2924/01015H01L2924/01006H01L24/45H01L2224/85464H01L2224/48465H01L2224/45147H01L2924/014H01L2224/48095H01L2224/32225H01L2224/85045H01L2224/97H01L2924/0102H01L2224/48455H01L2924/01023H01L2924/01033H01L2924/01082H01L2924/01047H01L2224/78268H01L2924/01027H01L2224/48091H01L23/4952H01L2924/12041H01L2924/01079H01L2924/01078H01L24/48H01L2224/85181H01L2924/0105H01L2224/45144H01L2924/15311H01L2224/48864H01L2224/48664H01L2224/85205H01L2924/181H01L24/73H01L2924/00014H01L2224/85H01L2224/83H01L2924/00H01L2924/00012H01L2224/92247H01L2224/43848H01L21/56H01L21/64H01L21/67
Inventor 高田泰纪住友芳堀部裕史新川秀之
Owner RENESAS ELECTRONICS CORP