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Solar cell and manufacturing method thereof

A technology for solar cells and manufacturing methods, applied in the field of solar cells

Inactive Publication Date: 2011-04-27
AXUNTEK SOLAR ENERGY
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0004] However, the current energy conversion rate of existing CIGS solar cells is about 14%, which is still far from the ideal conversion rate. Therefore, how to improve the energy conversion rate of CIGS solar cells and enhance its industrial utilization value is the key to the research and development of this solar cell. an important topic in

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  • Solar cell and manufacturing method thereof
  • Solar cell and manufacturing method thereof
  • Solar cell and manufacturing method thereof

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Embodiment Construction

[0027] The structure of the solar cell designed in the present invention includes a substrate 10, a conductive layer 11, a copper indium gallium selenide (CIGS) layer 12, and a transparent conductive layer 13, wherein:

[0028] The substrate 10 can be made of glass or plastic, and its upper surface forms a non-flat active surface 101 with continuous peaks and valleys. In this specific embodiment, a plurality of concave holes 102 are formed on the upper surface of the substrate 10. To form the non-flat active surface 101 , the cavity 102 can be a cavity in the shape of a V-shaped groove, an inverted cone, an inverted pyramid, or the like.

[0029] The conductive layer 11 can be metal molybdenum (Mo) and is formed on the uneven active surface 101 of the substrate 10 with a plurality of cavities to form a film with continuous peaks and valleys.

[0030] The copper indium gallium selenide (CIGS) layer 12 is copper indium gallium diselenide (CuIn 1-x Ga x Se 2 ) compound is form...

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Abstract

The invention discloses a solar cell and a manufacturing method thereof. The solar cell is manufactured by the following steps of: forming a peak-valley wavy active surface on the surface of a substrate, and forming a conductive layer, a copper indium gallium selenide (CIGS) layer and a transparent conductive layer in turn on the surface of the active surface, wherein the peak-valley wavy active surface can be completed by an invasive forming means, so that the conductive layer, the copper indium gallium selenide (CIGS) layer and the like subsequently formed on the active surface are wavy along the peaks and valleys of the active surface; therefore, the photo receiving area and reaction area can be increased, and the conversion rate of converting the optical energy into electric energy is improved.

Description

technical field [0001] The invention relates to a solar cell, in particular to a solar cell structure containing copper indium gallium diselenide (CIGS) quaternary compound and a manufacturing method thereof. Background technique [0002] Among the many kinds of solar cells currently available, the solar cell containing copper indium gallium selenide (CIGS) quaternary compound is a solar cell with high conversion efficiency and low manufacturing cost, and the CIGS solar cell also has excellent performance in outdoor environments. Good product stability is one of the development potentials in existing solar cells. [0003] The composition of the aforementioned solar cell containing copper indium gallium selenide (CIGS) quaternary compound is mainly to sequentially form a molybdenum (Mo) layer, a copper indium gallium selenide (CIGS) layer, and a transparent conductive layer on a substrate , wherein the CIGS layer is used as a light absorbing layer, and the light is irradiate...

Claims

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Application Information

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IPC IPC(8): H01L31/042H01L31/0236H01L31/18H01L31/0749
CPCY02E10/50Y02E10/541Y02P70/50
Inventor 李适维侯契宏陈彦君
Owner AXUNTEK SOLAR ENERGY
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