Method for controlling chip temperature during quick thermal treatment

A rapid heat treatment and wafer technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as wafer defects, high annealing temperature, affecting wafer structure, etc., and achieve the effect of improving yield rate and eliminating peak phenomenon

Inactive Publication Date: 2013-06-12
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This "sharp" temperature change will cause the annealing temperature of the wafer to actually be higher than the ideal annealing temperature of 530°C, which will affect the structure of the wafer after heat treatment and may cause defects in the wafer, so it needs to be solved in the prior art question

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  • Method for controlling chip temperature during quick thermal treatment
  • Method for controlling chip temperature during quick thermal treatment
  • Method for controlling chip temperature during quick thermal treatment

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Embodiment Construction

[0022] In the following description, numerous specific details are given in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without one or more of these details. In other examples, some technical features known in the art are not described in order to avoid confusion with the present invention.

[0023] In rapid thermal processing of wafers, for temperature control, two parameters, temperature change rate and temperature acceleration, are often used to reflect changes in wafer temperature. The temperature change rate, also known as the rate of climb, indicates the temperature change value per unit time, that is, the ratio of the temperature change value to time, and its unit is Celsius per second (°C / s). Temperature acceleration is the change value of the temperature change rate per unit time, that is, the ratio of the change value of the temperature ch...

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Abstract

The invention discloses a method for controlling chip temperature during quick thermal treatment. The method comprises the following steps of: naturally heating a chip within a first time interval; and at the end of the first time interval, quickly heating the chip at a second time interval. The method is characterized in that: the change rate of the temperature rising speed of the chip at the second time interval is between -1.5 DEG C / s<2> and -1.2 DEG C / s<2>; and preferably, the change rate of the temperature raising speed of the chip at the second time interval is -1.2 DEG C / s<2>. According to the temperature rising control method, a peak phenomenon can be eliminated effectively and the chip yield is increased.

Description

technical field [0001] The present invention relates to semiconductor manufacturing, and more particularly to a method for controlling wafer temperature in rapid thermal processing. Background technique [0002] In semiconductor manufacturing, rapid thermal processing (RTP) has been widely used in processes such as rapid thermal oxidation of wafers, rapid thermal annealing, and heat treatment of growing metal silicides such as silicon tungsten and silicon cobalt on wafers. Diffusion furnace is a common heat treatment equipment in 8-inch and 12-inch integrated circuit production lines. Its working principle is to place the whole batch of wafers in a high-temperature environment at the same time for a certain period of time (usually several hours) to complete the growth and diffusion of the wafers. Its main advantages are simple process control and low cost. However, with the continuous development of integrated circuit technology, the requirements for the technology are beco...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/00
Inventor 温传敬元琳
Owner SEMICON MFG INT (SHANGHAI) CORP
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