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Wafer vertically-annealing method and device

A technology of vertically placing wafers, applied in chemical instruments and methods, crystal growth, post-processing details, etc., can solve problems such as uneven annealing of wafers, achieve the effects of improving yield, uniform temperature, and reducing production costs

Active Publication Date: 2012-12-12
SHANXI CHINA CRYSTAL TECH CO LTD
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  • Abstract
  • Description
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Problems solved by technology

[0003] The purpose of the present invention is to solve the problem of uneven annealing in the existing wafer production process, and provide a method and device for vertical annealing of wafers

Method used

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  • Wafer vertically-annealing method and device
  • Wafer vertically-annealing method and device

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Embodiment Construction

[0021] Such as figure 1 Shown, the method for a kind of wafer vertical annealing of the present invention comprises the following steps:

[0022] (1). Place the wafer 4 on the rack 3, and then stack several racks 3 together;

[0023] (2). The stacked film racks 3 are placed on the bracket 5, and they are packed into the quartz cap 6 and the quartz tube 2, and the purity of 99.999% germanium, silicon, phosphorus or The semiconductor material 8 of arsenic, the quartz tube 2 is welded and sealed on the quartz cap 6 through the welding point or the welding surface 7, and the wafer vertical placement device is obtained;

[0024] (3). The above-mentioned wafer vertical placement device is vertically placed in the annealing furnace 1;

[0025] (4). After the annealing starts, raise the temperature of the annealing furnace at a rate of 1-10°C / min. When the temperature of the annealing furnace reaches 0.5-0.8 times the melting point of the wafer material, keep it warm for 4-18 hours ...

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Abstract

The invention provides a wafer vertically-annealing method. The method comprises the following steps: placing wafers on sheet frames, and then piling the sheet frames together; placing the piled sheet frames on a bracket, placing the sheet frames and bracket into a quartz cap and a quartz tube, loading semi-conductor materials into the quartz cap, and soldering the quartz tube to the quartz cap by welding points or welding surfaces so that a wafer vertically-placing device is produced; vertically placing the wafer vertically-placing device in the annealing furnace; raising the temperature of the annealing furnace at the speed of 1-10 DEG C / minute after annealing begins, preserving the furnace temperature for 4-18 hours when the temperature of the annealing furnace reaches the temperature which is 0.5-0.8 time as high as the wafer material melting point temperature, reducing the temperature of the annealing furnace at the speed of 1-10 DEG C / minute until the furnace temperature reachesthe room temperature; and sawing the quartz cap and / or quartz tube so as to take the wafers out, thus finishing the annealing of the wafers. By using the wafer vertically-annealing method, the even annealing temperature of each wafer is ensured, thereby improving the yield of the wafer.

Description

technical field [0001] The invention relates to a wafer vertical annealing method and its device, in particular to a semiconductor wafer annealing method and its device. Background technique [0002] In the existing wafer production, the wafer is usually placed horizontally in the annealing furnace for annealing, and the wafer is supported by two points on the wafer vertical placement device. Like this, because a wafer is positioned at different heights of the annealing furnace, and the annealing furnace has different temperatures on different heights, so the horizontal placement of the wafer makes a wafer be positioned at different temperature regions of the annealing furnace, resulting in uneven annealing of the wafer, serious The production quality of the wafer is affected, and the production cost of the wafer is increased. Contents of the invention [0003] The purpose of the present invention is to solve the problem of uneven annealing in the existing wafer productio...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B33/02
Inventor 卜俊鹏朱蒙张生国
Owner SHANXI CHINA CRYSTAL TECH CO LTD
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