Nitride semiconductor light emitting element and method for manufacturing same

一种氮化物类、发光元件的技术，应用在半导体/固态器件制造、半导体器件、电气元件等方向，达到抑制非均匀应变分布的效果

Active Publication Date: 2011-06-01
PANASONIC SEMICON SOLUTIONS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since the distribution of this non-uniform strain distribution will cause non-uniform light emission in the plane, it is not ideal

Method used

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  • Nitride semiconductor light emitting element and method for manufacturing same
  • Nitride semiconductor light emitting element and method for manufacturing same
  • Nitride semiconductor light emitting element and method for manufacturing same

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Embodiment approach 1

[0089] First, refer to figure 1 A first embodiment of the nitride-based semiconductor light-emitting device according to the present invention will be described.

[0090] The nitride-based semiconductor light-emitting element 1 of the present embodiment is, for example, figure 1 Shown are: a selective growth layer 11 , and a nitride-based semiconductor stack structure 12 formed on the selective growth layer 11 . The selective growth layer 11 has a portion grown laterally by the ELO method.

[0091]The nitride-based semiconductor stack structure 12 includes: an active layer 13 including Al a In b Ga c N crystal layer (a+b+c=1, a≥0, b≥0, c≥0); Al d Ga e The N layer (d+e=1, d>0, e≥) 14 is located on the side opposite to the side where the selective growth layer 11 is located relative to the active layer 13 .

[0092] Al d Ga e Part of the N layer 14 has a layer (In-containing layer) 15 containing In at a concentration of 1×10 16 atms / cm 3 Above 1×10 19 atms / cm 3 The ...

Embodiment approach 2

[0098] Below, refer to Figure 2 to Figure 20 A second embodiment of the nitride-based semiconductor light-emitting element according to the present invention will be described. The nitride-based semiconductor light-emitting element 100 of this embodiment is a semiconductor device using a GaN-based semiconductor, and is produced by the ELO method in order to reduce rearrangement density.

[0099] Such as figure 2 As shown in (a), the light-emitting element 100 of this embodiment has: a substrate 10; u Ga v In w N layer (u+v+w=1, u≥0, v≥0, w≥0) 20, which is formed on the substrate 10; Al x Ga y In z N crystalline layer (x+y+z=1, x≥0, y≥0, z≥0) 30, which is formed on Al u Ga v In w N layer 20 functions as a selective growth layer; semiconductor stacked structure 50, which is formed on Al x Ga y In z N crystal layer 30.

[0100] in Al u Ga v In w The N layer 20 forms a groove (recess) 22 , and a mask 23 for selective growth is formed on the bottom surface of the ...

Embodiment approach 3

[0164] Below, refer to Figure 21 A third embodiment of the nitride-based semiconductor light-emitting diode according to the present invention will be described.

[0165] The nitride-based semiconductor light-emitting element 200 of this embodiment is, for example, Figure 21 Shown are a GaN substrate 60 and a semiconductor stack 70 formed on the GaN substrate 60 .

[0166] The GaN substrate 60 of this embodiment is formed by performing the ELO method. To obtain the GaN substrate 60 , for example, a GaN layer for the GaN substrate may be formed thick while covering a part of a sapphire substrate (not shown) with a mask made of a silicon oxide film and exposing the other part. In this method, the sapphire substrate is removed after the GaN layer is formed. Alternatively, mesh-shaped titanium may be formed on a GaN layer formed on a sapphire substrate, and a GaN layer for the GaN substrate may be formed thereon. In this method, after the GaN layer is formed, titanium is use...

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Abstract

Provided is a nitride semiconductor light emitting element having a nitride semiconductor laminated structure (50). The nitride semiconductor laminated structure (50) includes an active layer (32) which includes an AlaInbGacN crystal layer (a+b+c=1, a= 0, b=0, c=0), an AldGaeN overflow suppressing layer (36) (d+e=1, d>0, e=0), and an AlfGagN layer (38) (f+g=1, f=0, g=0, fdGaeN overflow suppressing layer (36) is arranged between the active layer (32) and the AlfGagN layer (38), and the AldGaeN overflow suppressing layer (36) includes a layer (35) which contains In at a concentration of 11016 atms / cm3 or more but not more than 11019 atms / cm3.

Description

technical field [0001] The invention relates to a nitride-based semiconductor light-emitting element and a manufacturing method thereof. In particular, the present invention relates to GaN-based semiconductors such as light-emitting diodes and laser diodes that are expected to be applied to the fields of display, lighting, and optical information processing, etc. light emitting element. Background technique [0002] A nitride semiconductor having nitrogen (N) as a group V element is promising as a material for a short-wavelength light-emitting device because of its large band gap. Among them, gallium nitride-based compound semiconductors (GaN-based semiconductors: Al x Ga y In z The research of N(0≤X, Y, Z≤1, X+Y+Z=1)), the semiconductor lasers using blue light-emitting diodes (LEDs), green LEDs, and GaN-based semiconductors as materials have also been practical (for example , refer to Patent Documents 1 and 2). [0003] When a GaN-based semiconductor is used to fabric...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L21/205
CPCH01L33/025H01L33/12H01L21/02458H01L21/0254H01L21/02639H01L33/16H01L33/007
Inventor 横川俊哉加藤亮
Owner PANASONIC SEMICON SOLUTIONS CO LTD
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