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Annealing device and method

An annealing device and annealing technology, applied in chemical instruments and methods, single crystal growth, crystal growth, etc., can solve the problems of thermal mismatch, expensive GaN substrate, epitaxial film cracking, etc.

Active Publication Date: 2012-07-11
SINO NITRIDE SEMICON
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, due to the lattice mismatch and thermal mismatch between the GaN epitaxial thick film and the substrate used in the heteroepitaxial process, the epitaxial film is cracked, warped, etc., and these problems lead to low yield. The main reason for the high price of GaN substrates

Method used

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  • Annealing device and method

Examples

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example 1

[0039] Example 1: Oscillating cooling annealing

[0040] First, the hardware platform such as figure 1 The sub-modules shown are built. Then install the communication port driver of the hardware, and the flow of communication signals between the hardware and the software is as follows: image 3 shown. Then install the cooling annealing user interface software designed by the present invention. When cooling annealing is required, run the cooling annealing user interface software and load the following Excel annealing control menu table:

[0041] Table 3 Oscillatory annealing control dishes

[0042] StpIndx temperature position Wait Tim 1 900 700 5 2 850 670 5 3 800 645 5 4 750 620 5 5 680 595 100 6 630 545 100 7 600 530 100 8 630 545 100 9 670 605 100 10 730 615 80 11 670 605 80 12 610 525 80 13 580 510 80 14 610 530 80 15 680 600 80 17 710 610 60 ...

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Abstract

The invention relates to a device and method for carrying out annealing control according to temperature reducing rate, retention time, moving speed, and the like and especially solves the problem that the prior art can not carry out automatic control according to GaN substrate temperature, thus the temperature can be used as a constant for carrying out annealing process research and the stable annealing process thereof on GaN with different thicknesses. In the invention, the functions of automatic judgment, temperature reducing type adjustment, annealing control menu programmability and real-time data storage are realized by adopting closed-loop control, the functions of automation control, operation prompt, visual display, suspension, cancelling, current running state display, and the like for the annealing process of a semiconductor industry are achieved, and a special program can be formulated according to different requirements.

Description

technical field [0001] The invention is used in semiconductor industry, such as epitaxial wafers, GaN substrate stress release and other fields that require annealing process control, and is especially suitable for accurately controlling the cooling rate of the substrate in the current hydride vapor phase epitaxy (HVPE) system. Combined with the annealing process, it is necessary to accurately control the platform to ensure the stability of the industrial mass production process, or to record data in real time as scientific research data. Background technique [0002] Among the GaN substrate growth technologies, hydride vapor phase epitaxy (HVPE) has become a breakthrough technology for GaN substrates due to its high growth rate (up to 800 μm / h or more), low cost, large-area growth and good uniformity. First choice, the vast majority of current research work is focused on this. HVPE grows GaN substrates, usually by epitaxially growing a 0.5-1mm thick film on a substrate suc...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B33/02C30B29/40
Inventor 袁志鹏陆羽刘鹏张国义孙永健李燮赵红军
Owner SINO NITRIDE SEMICON