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Transistor with embedded SI/GE material having enhanced boron confinement

A crystallization and semiconductor technology, applied in the manufacture of transistors, semiconductor devices, semiconductor/solid-state devices, etc., can solve the problems of not being able to fully develop the strain-inducing mechanism, reducing the elasticity of cavities and strain-inducing materials 155

Inactive Publication Date: 2011-06-22
ADVANCED MICRO DEVICES INC
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the former approach may not fully exploit the possibilities of the strain-inducing mechanism provided by the material 155, while the latter approach may require a specially designed etching process, thereby reducing the cost of adjusting the size and shape of the corresponding cavity and strain-inducing material 155. Elasticity on

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  • Transistor with embedded SI/GE material having enhanced boron confinement
  • Transistor with embedded SI/GE material having enhanced boron confinement
  • Transistor with embedded SI/GE material having enhanced boron confinement

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Embodiment Construction

[0028] Various exemplary embodiments of the present invention will be described below. In the interest of clarity, not all features of an actual implementation are described in this specification. It should be appreciated, of course, that in the development of any such actual embodiment, many implementation-specific decisions must be made to achieve the developer's specific goals, such as compliance with system-related and business-related constraints which Will vary from implementation to implementation. Furthermore, it should be appreciated that such a development effort might be complex and time consuming, but would nevertheless represent a routine undertaking for those of ordinary skill in the art having the benefit of this disclosure.

[0029] The invention will now be described with reference to the accompanying drawings. Various structures, systems and devices are schematically depicted in the drawings for purposes of explanation only, without obscuring the present in...

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Abstract

The invention provides a transistor with embedded SI / GE material having enhanced boron confinement. By incorporating a diffusion hindering species (256A) at the vicinity of PN junctions of P-channel transistors comprising a silicon / germanium alloy, (255) diffusion related non- uniformities of the PN junctions may be reduced, thereby contributing to enhanced device stability and increased overall transistor performance. The diffusion hindering species (256A) may be provided in the form of carbon, nitrogen and the like.

Description

technical field [0001] The present invention relates generally to the fabrication of integrated circuits, and more particularly to enhancing charge carrier transport in the channel region of the transistor by using embedded silicon / germanium (Si / Ge) to form transistors with strained channel regions. rate (charge carrier mobility). Background technique [0002] The fabrication of complex integrated circuits requires a large supply of transistor elements, which represent the major circuit elements used to design the circuits. For example, hundreds of millions of transistors can be arranged in currently available complex integrated circuits. Generally speaking, there are several process technologies currently implemented, among which, for complex circuits (such as microprocessors, memory chips, etc.), due to the superior characteristics of operating speed and / or power consumption and / or cost-effectiveness of CMOS technology, Therefore, CMOS technology is currently the most pr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/265H01L21/336H01L29/78
CPCH01L29/66636H01L29/7834H01L21/26506H01L29/7848H01L29/165H01L21/26513H01L29/6659
Inventor J·霍尼舒尔M·维亚特尔V·帕帕耶奥尔尤
Owner ADVANCED MICRO DEVICES INC