Method for cleaning reaction cavity for growing films of compounds of group III elements and group V elements

Abstract

The invention discloses a method for cleaning a reaction cavity for growing films of compounds of group III elements and group V elements, which comprises the following steps of: cleaning the reaction cavity, namely introducing cleaning gas into the reaction cavity, forming plasmas of the cleaning gas in the reaction cavity, and maintaining the plasmas of the cleaning gas for a first period of time to remove accumulated deposits in the reaction cavity; and restoring the state of the reaction cavity, namely introducing reaction gas containing the group III elements and the group V elements into the reaction cavity, and acting in the reaction cavity for a second period of time to obtain a coating of compounds of the group III elements and group V elements. The cleaning method is effective and time-saving, can ensure the cleaning quality and consistence each time, and cannot have adverse effect on a subsequent film growth process.

Description

technical field [0001] The invention relates to a device and method for growing compound films of group III elements and group V elements, in particular to a method for cleaning a reaction chamber for growing compound films of group III elements and group V elements and a method for restoring the state of the reaction chamber. Background technique [0002] As a typical thin film of group III and group V element compounds, gallium nitride (GaN) is a material widely used in the manufacture of blue, violet and white light diodes, ultraviolet detectors and high-power microwave transistors. The growth of GaN thin films has received great attention due to GaN's actual and potential use in fabricating low energy consumption devices (eg, LEDs) suitable for a large number of applications. [0003] GaN thin films can be grown in many different ways, including molecular beam epitaxy (MBE), hydride vapor phase epitaxy (HVPE), metal organic compound chemical vapor deposition (MOCVD) and ...

AI Technical Summary

Problems solved by technology

The disadvantage of this cleaning method is: to clean the reaction chamber, the original film growth process must be stopped, and it takes a long time to reduce the internal temperature of the reaction chamber to a temperature suitable for manual cleaning, and the reaction chamber must be opened. , because these operations need to be carried out in a "shutdown" state, for the reaction chamber user, every time the reaction chamber is cleaned, the film growth process will be forced to stop, which will lead to a decrease in the throughput of the reaction chamber. ) to reduce and increase the cost of use of producers

Moreover, because this cleaning method is "manual cleaning", the cleaning is not thorough, and the results of each cleaning are inconsistent, which may lead to deviations and defects in process quality in the subsequent film growth process

[0007] At the same time, a technical problem faced by the industry is: after cleaning the reaction chamber, some cleaning gas residues or reaction by-products generated during the cleaning process will accumulate in the reaction chamber or adsorb on the surface of the reaction chamber. The existence of reaction by-products will adversely affect the next film growth process, resulting in unstable uniformity or defects in the produced film

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