Cr4Mo4V steel bearing carbon-nitrogen plasma radical ion carburizing method by means of warming
A plasma and bearing technology, applied in metal material coating process, coating, solid-state diffusion coating, etc., can solve the problem of shallow modified layer, etc., and achieve the effects of high production efficiency, safe and convenient operation control, and convenient operation
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specific Embodiment approach 1
[0018] Specific implementation mode one: Cr in this implementation mode 4 Mo 4 The carbon-nitrogen plasma-based ion heating and infiltration method for V steel bearings is as follows: 1. Ultrasonic cleaning: Cr 4 Mo 4 Put the V-steel bearing into an acetone solution with a purity of more than 99.9%, and ultrasonically clean it twice at an ultrasonic frequency of 40kHz, and the time for each ultrasonic cleaning is 8min to 15min; Cr 4 Mo 4 Put the V-steel bearing on the sample stage of the vacuum chamber, and evacuate to a vacuum degree of 1.0×10 -4 Pa~1.0×10 -3 Pa, raise the temperature to 300°C~400°C, and then work at a working pressure of 5Pa~10Pa, a radio frequency power of 0.8kW~2kW, a voltage of 500V~700V, and a current of 0.2mA / cm 2 ~0.5mA / cm 2 Under certain conditions, adjust the RF power so that the generated argon plasma concentration is 1.0×10 9 / cm 3 ~1.0×10 10 / cm 3 , perform pre-sputtering cleaning for 10min to 30min; 3. Carbon and nitrogen ion implantat...
specific Embodiment approach 2
[0021] Specific embodiment two: the difference between this embodiment and specific embodiment one is that in step two, Cr 4 Mo 4 The V-steel bearings were pre-sputtered and cleaned for 20 minutes, the radio frequency power was 1.2kW-1.5kW, and the voltage was 550V-650V. Others are the same as in the first embodiment.
specific Embodiment approach 3
[0022] Specific embodiment three: the difference between this embodiment and specific embodiment one is that in step two, Cr 4 Mo 4 V-steel bearings are pre-sputtered and cleaned for 30 minutes, the radio frequency power is 0.8kW-1.5kW, and the current is 0.25mA / cm 2 . Others are the same as in the first embodiment.
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