Process for cleaning laser-marked silicon slice
A technology of laser marking and silicon wafers, which is applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of equipment spare parts maintenance, equipment capital investment, equipment space occupation, etc., to reduce cleaning costs and reduce erosion , the effect of convenient operation
Active Publication Date: 2012-07-11
WUXI ZHONGWEI JINGYUAN ELECTRONIC CO LTD
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Problems solved by technology
The traditional processing method adopted after silicon wafer laser marking is a combination of silicon wafer wiping machine and traditional wet cleaning method. Space occupation of equipment, equipment maintenance and continuous consumption of equipment spare parts, etc., which are unbearable for many small processing lines. Technical approach requirements for post-bid cleaning requirements
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Embodiment Construction
[0008] The present invention will be further described below in conjunction with specific examples.
[0009] Due to the conventional semiconductor process, after the silicon wafer laser marking process is completed, before the oxide layer growth process on the silicon wafer surface, it is necessary to remove all kinds of impurity particles (silicon chips) caused by the laser marking in the previous process to obtain a clean , No damage, and at the same time meet the process particle index (less than 10 particles with a diameter greater than 0.5um, and less than 100 particles with a diameter greater than 0.2um) to obtain a high-quality oxide layer. In order to reduce the cleaning cost after silicon wafer laser marking, the cleaning process of the present invention comprises the following steps:
[0010] a. Place the laser-marked silicon wafer in an acid solution for cleaning, the acid solution is formed by mixing HF solution and water; the volume relationship between the HF and...
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The invention relates to a process for cleaning laser-marked silicon slice, which comprises the following steps of: a) placing the laser-marked silicon slice in acid solution formed by mixing HF solution and water to clean; b) carrying out circulated washing on the laser-marked silicon slice by using deionized water; c) placing the silicon slice in mixed solution comprising NH4OH solution, H2O2 solution and H2O for cleaning for 4-6 minutes; d) carrying out mixed washing on the silicon slice cleaned in the mixed solution by using the deionized water; e) placing the silicon slice in the acid solution again for cleaning for 0.5-1 minutes; f) overflowing the acid-washed silicon slice by using the deionized water for 4-6 minutes, and then carrying out circulated washing on the silicon slice byusing the deionized water; g) placing the silicon slice in the mixed solution comprising NH4OH solution, H2O2 solution and H2O again for cleaning for 4-6 minutes; and h) carrying out circulated washing on the silicon slice by using the deionized water. The process has the advantages of simple step, wide application and convenient operation with safety and reliability, and the cleaning cost is reduced..
Description
technical field [0001] The invention relates to a cleaning process, in particular to a cleaning process after laser marking of a silicon wafer, and belongs to the technical field of semiconductor processing. Background technique [0002] Throughout the development of today's foundry lines, the structure of foundry circuits is becoming more and more complex, the applications are becoming more and more extensive, and the types of circuits are increasing. In order to prevent the confusion of online wafers and improve the identification of wafers, more and more processing lines use silicon wafer laser marking machines to identify wafers by laser marking. There will be several thousand to tens of thousands of particles with a diameter larger than 0.2 μm on the surface, which puts forward the need for cleaning technology after laser marking. The traditional processing method adopted after silicon wafer laser marking is a combination of silicon wafer wiping machine and traditional...
Claims
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IPC IPC(8): C23G1/02C23G1/14H01L21/02
Inventor 洪根深高向东郭晶磊陶军
Owner WUXI ZHONGWEI JINGYUAN ELECTRONIC CO LTD