Unlock instant, AI-driven research and patent intelligence for your innovation.

CoolMOS structure

A drift region and epitaxial layer technology, applied in electrical components, circuits, semiconductor devices, etc., can solve problems such as increased on-resistance and increased cost

Inactive Publication Date: 2011-08-03
SHANGHAI RES INST OF MICROELECTRONICS SHRIME PEKING UNIV
View PDF4 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The CoolMOS structure is a structure formed by depositing epitaxial layers multiple times and implanting P columns 29 multiple times. However, as the BV increases, the number of depositions of the epitaxial layers will also increase accordingly, which increases the A large part of the cost also makes the on-resistance gradually increase

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • CoolMOS structure
  • CoolMOS structure
  • CoolMOS structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0019] The traditional CoolMOS structure is proposed on the basis of VDMOS devices. It mainly adopts a structure formed by depositing epitaxial layers multiple times and injecting P columns multiple times. In this structure, the concentration of epitaxial layers deposited each time is the same. This method effectively utilizes the principle of charge compensation, when the device is in the positive quiescent state, the electric field decays not only in the vertical direction but also in the horizontal direction, resulting in thinner N - In the drift region or higher concentration of N-type doping, the conduction voltage drop is reduced by 5 times compared with the traditional VDMOS structure. However, as the breakdown voltage BV increases, the number of depositions of the epitaxial layer will also increase accordingly, which increases a large part of the cost and gradually increases the on-resistance. In order to increase the breakdown voltage BV without increasing the number...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a Cool metal oxide semiconductor (MOS) structure, which is used for increasing a breakdown voltage. The structure is used for manufacturing a CoolMOS. A drift region and a situation showing a dosage concentration of the drift region are involved. The situation showing the dosage concentration of the drift region is marked by a virtual line. The method comprises a step of manufacturing the drift region, and a step of regulating the dosage concentration of the drift region during manufacturing of the drift region so that the aim of increasing the breakdown voltage can be fulfilled. On the basis of the method, a new method is provided for increasing the breakdown voltage of a vertical double-diffused (VD) MOS under the condition of not adding a mask plate and not increasing the manufacturing cost.

Description

technical field [0001] A CoolMOS structure belongs to the technical field of semiconductor power devices, and in particular relates to a vertical double-diffusion metal oxide semiconductor field effect transistor structure and a manufacturing method thereof. Background technique [0002] Double-diffused technology oxide semiconductor field effect transistor (DMOS, Double-diffused MOSFET) devices are commonly used power devices, including lateral double-diffused metal oxide semiconductor field-effect transistor (LDMOS, Lateral Double-diffused MOSFET) and vertical double-diffused metal oxide VDMOS, Vertical Double-diffused MOSFET. Breakdown voltage is an important parameter to measure the performance of DMOS devices. It usually means the maximum voltage that can be applied between the source and drain of DMOS without being broken down during the guarantee period. [0003] VDMOS devices can obtain ideal on-resistance and switching characteristics in low-voltage applications, b...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L29/78H01L29/06H01L21/336
CPCH01L29/7802H01L29/0634H01L29/0878H01L29/1095H01L29/66712
Inventor 邢晓萍程玉华
Owner SHANGHAI RES INST OF MICROELECTRONICS SHRIME PEKING UNIV