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Method for constant concentration evaporation and device using same

An evaporating equipment and concentration technology, which is applied in evaporating devices, coatings, preventing collapse, etc., can solve the problems that the temperature of the carrier gas fluid cannot be strictly controlled, and the concentration of chemical substances changes.

Active Publication Date: 2013-12-18
EDWARDS SEMICON SOLUTIONS LLC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The disadvantage of this system is that the temperature of the carrier fluid and the temperature of the precursor cannot be tightly controlled, resulting in variations in the concentration of the chemical species deposited on a variety of substrates

Method used

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  • Method for constant concentration evaporation and device using same
  • Method for constant concentration evaporation and device using same
  • Method for constant concentration evaporation and device using same

Examples

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Embodiment Construction

[0020] It will be understood that when an element is described as being "on" another element, it can be directly on the other element or intervening elements may be present between the two elements. In contrast, when an element is described as being "directly on" another element, there are no intervening elements present. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items. As used herein, the term "substrate" refers to any surface onto which a metal-containing film is deposited by vapor deposition.

[0021] It should be understood that although the terms first, second, third, etc. are used herein to describe various elements, components, regions, layers and / or sections, these elements, components, regions, layers and / or sections are not constrained by the terms. limits. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or secti...

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Abstract

Disclosed herein is a device comprising an evaporator (100); and a heat exchanger (300); the heat exchanger being in fluid communication with evaporator (100); evaporator comprising an outer casing (102); and an inner casing (110) that is disposed within the outer casing (102); the inner casing (110) contacting a plate (200); wherein the inner casing (110) encloses a first conduit (210) that is operative to introduce a carrier fluid into evaporator (100); and a second conduit (214) that is operative to remove carrier fluid entrained with a precursor; wherein the outer casing (102) is detachably attached to the plate (200); the plate (200) contacting a first precursor conduit (306) that is operative to introduce the precursor into evaporator (100) from the heat exchanger (300); where the heat exchanger (300) is disposed proximate to evaporator (100) at a distance effective to maintain the precursor in evaporator (100) at a substantially constant temperature when the ambient temperature around the heat exchanger (300) and evaporator (100) fluctuates by an amount of up to about ± 35°C.

Description

technical field [0001] The present invention relates to a method of constant concentration evaporation and articles using the method. Background technique [0002] Metal-containing thin films are used in a variety of electronic and optoelectronic applications. In the electronics industry, especially the semiconductor industry, chemical vapor deposition ("CVD") methods are commonly used to deposit metal-containing layers (or films) on substrates. A metal-containing precursor and optional dopant (hereinafter "precursor") are delivered to a deposition reactor and deposited on a substrate to form a metal-containing film. The precursor is typically provided in a bubbler (also known as a cylinder or evaporator). In use, a carrier gas fluid enters the bubbler, passes through the precursor, becomes saturated with the precursor, and then the carrier gas / precursor vapor mixture exits the cylinder and is sent to the deposition chamber. In a deposition chamber, a layer or film contai...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/448
CPCC23C16/4482B01B1/005B01B1/06C23C16/34C23C16/4411C23C16/4412C23C16/4486C23C16/45525C23C16/511H01L21/02365Y10T29/49396
Inventor E·沃尔克R·L·小迪卡洛
Owner EDWARDS SEMICON SOLUTIONS LLC
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