Method for constant concentration evaporation and device using same

An evaporating equipment and concentration technology, which is applied in evaporating devices, coatings, preventing collapse, etc., can solve the problems that the temperature of the carrier gas fluid cannot be strictly controlled, and the concentration of chemical substances changes.
CN102162092BActive Publication Date: 2013-12-18EDWARDS SEMICON SOLUTIONS LLC
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
EDWARDS SEMICON SOLUTIONS LLC
Publication Date
2013-12-18

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Abstract

Disclosed herein is a device comprising an evaporator (100); and a heat exchanger (300); the heat exchanger being in fluid communication with evaporator (100); evaporator comprising an outer casing (102); and an inner casing (110) that is disposed within the outer casing (102); the inner casing (110) contacting a plate (200); wherein the inner casing (110) encloses a first conduit (210) that is operative to introduce a carrier fluid into evaporator (100); and a second conduit (214) that is operative to remove carrier fluid entrained with a precursor; wherein the outer casing (102) is detachably attached to the plate (200); the plate (200) contacting a first precursor conduit (306) that is operative to introduce the precursor into evaporator (100) from the heat exchanger (300); where the heat exchanger (300) is disposed proximate to evaporator (100) at a distance effective to maintain the precursor in evaporator (100) at a substantially constant temperature when the ambient temperature around the heat exchanger (300) and evaporator (100) fluctuates by an amount of up to about ± 35°C.
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Description

technical field

[0001] The present invention relates to a method of constant concentration evaporation and articles using the method. Background technique

[0002] Metal-containing thin films are used in a variety of electronic and optoelectronic applications. In the electronics industry, especially the semiconductor industry, chemical vapor deposition ("CVD") methods are commonly used to deposit metal-containing layers (or films) on substrates. A metal-containing precursor and optional dopant (hereinafter "precursor") are delivered to a deposition reactor and deposited on a substrate to form a metal-containing film. The precursor is typically provided in a bubbler (also known as a cylinder or evaporator). In use, a carrier gas fluid enters the bubbler, passes through the precursor, becomes saturated with the precursor, and then the carrier gas / precursor vapor mixture exits the cylinder and is sent to the deposition chamber. In a deposition chamber, a layer or film contai...

Claims

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