Thermal field structure of polysilicon ingot casting furnace
A polycrystalline silicon ingot furnace and thermal field technology, which is applied in the directions of polycrystalline material growth, crystal growth, single crystal growth, etc., can solve problems such as affecting the crystal quality of polycrystalline silicon ingots.
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[0021] The general idea of the technical solution of the present invention is: the thermal insulation cage body is composed of an upper thermal insulation body, a lower thermal insulation body and a thermal insulation bottom plate to form a sealed thermal field chamber, and the lower thermal insulation body can slide up and down relative to the upper thermal insulation body through a lifting mechanism. During the lifting process of the lower insulation body, due to the high and low temperature difference in the thermal field chamber, a vertical temperature gradient field is formed on the crystallization surface of silicon. By controlling heat dissipation and heating, silicon can be oriented and crystallized, and its crystallization is solidified. The process is effectively controlled to improve the quality of the polysilicon ingot, and at the same time shorten the whole process time, reduce the energy consumption in the crystallization process, and increase the unit production...
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