Multi inductively coupled plasma reactor and method thereof

Abstract

Disclosed is a multi-inductively coupled plasma reactor and method thereof. In a multi-inductively coupled plasma reacting method, an etching method to increase a specific portion of a substrate to be processed includes etching a specific portion of a substrate to be processed; and depositing a passivation layer on a surface of the specific portion etched, wherein the etching and depositing steps are repeatedly proceeded, and one of both steps is executed when there is plasma formed by a central plasma source and a peripheral plasma source. According to the multi-inductively coupled plasma reactor and method thereof of the invention, it is possible that plasma is uniformly processed on the entire area of the substrate since the central plasma source and the peripheral source are provided separately. Further, it is possible to form an independent multiple plasma area without electrical interference in the plasma reactor using the interference prevention electrode grounded between the central plasma source and the peripheral plasma source. Further, the plasma formed by the central plasma source and the peripheral plasma source is used to deeply etch a specific portion of the substrate to be processed.

Description

technical field [0001] The present invention relates to multiple inductively coupled plasma reactors and methods thereof, and in particular, to a method of using multiple inductively coupled plasmas to etch back a specific portion of a substrate to be processed. Background technique [0002] In the anisotropic etching method of silicon, a process of etching a specific portion in a substrate to be processed and depositing a passivation layer on the etched specific portion is repeatedly performed. While the etching and deposition processes are repeatedly performed, a specific portion of the substrate to be processed is etched to a desired depth. This etching and deposition process is achieved by plasma. [0003] A plasma is a highly ionized gas that includes equal numbers of positive ions and electrons. A plasma discharge is used to excite the gas to produce an activated gas comprising ions, free radicals, atoms and molecules. That is, activated gases are widely used in var...

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Problems solved by technology

[0007] In addition, due to the large-scale substrate to be processed, there arises a problem that the central region and the peripheral region in the substrate to be processed are not uniformly processed by the plasma

That is, since plasma is intensively formed in the central region of the substrate to be processed as compared with the peripheral region, a difficulty arises in completely and uniformly processing the substrate to be processed

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