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Die bonding method

A technology of bonding crystals and wafers, applied in the direction of electric solid devices, electrical components, circuits, etc., can solve the problems of complex process, high cost, defective products and other problems, and achieve simple process, small thermal damage, and low cost of crystal bonding. Effect

Inactive Publication Date: 2012-11-21
DONGGUAN WANFENG NANOMETER MATERIALS
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  • Abstract
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Problems solved by technology

[0005] The above-mentioned patents solve the defects of the existing technology in terms of structure, but the welding effect of the components to be welded after passing through the 250°C-300°C welding furnace is not ideal. If a better effect is obtained, at least 280°C- 320°C or even higher, but it is a continuous process for components to pass through the soldering furnace. After exceeding 250°C, the thermal damage to the LED chip will be obvious, and there will be defective or potential defective products
[0006] On the other hand, the existing crystal bonding method requires large-scale equipment such as vacuum coating and tunnel furnace, and the process is relatively complicated and the cost is high.

Method used

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Embodiment Construction

[0022] The present invention will be described in further detail below in conjunction with the accompanying drawings.

[0023] refer to figure 1 , is a packaging module prepared by the crystal bonding method of the first embodiment of the present invention, including LED chips 103, and copper pillars 101, the copper pillars 101 are pierced through the plastic shell 104, and the LED chips 103 are arranged on the copper pillars 101 At the end of the surface, the lower end surface of the copper column 101 is exposed from the lower surface of the plastic shell 104, and the LED chip 103 is exposed from the upper surface of the plastic shell 104. The electrode 105 is sandwiched in the plastic shell 104, and the inner end of the electrode 105 is also exposed from the plastic shell 104. The upper surface of the LED is exposed, and the LED chip 103 is connected to the inner end of the electrode 105 through a gold wire 106 . In this embodiment, the copper pillar 101 has steps, and the ...

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Abstract

The invention relates to a semiconductor packaging technology, in particular to a die bonding method which comprises the following steps: S10, providing a plastic shell with a copper column; S20, providing an Au / Sn eutectic piece, and placing the Au / Sn eutectic piece at the end part of the copper column; S30, performing ultrasonic melting on the Au / Sn eutectic piece; and S40, providing an LED (light-emitting diode) chip, and placing the LED chip at the end part of the copper column, wherein the time interval between the S30 and the S40 is 0.01s to 0.25s. The invention provides the die bondingmethod with simple process and structure.

Description

technical field [0001] The invention relates to semiconductor packaging technology, in particular to a crystal bonding method. Background technique [0002] LED lights have the characteristics of long life and power saving, and are more and more widely used in the field of lighting. [0003] In the prior art, LED chips are often connected to the substrate through silver glue, and then sealed with glue; some are soldered through Sn, too little silver is used, and the thermal conductivity is not good; too much silver is used, and the firmness is not good; it is difficult to balance Thermal conductivity and firmness. [0004] There are also people who use Au / Sn eutectic materials to weld chips, such as the preparation method of the LED package module disclosed in Chinese patent document CN101691910A on April 7, 2010, which is used for the manufacture of the LED package module described in claim 1 or claim 3 , the method includes a crystal-bonding process, characterized in tha...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/62H01L33/48
CPCH01L2224/48091H01L2224/48247H01L2224/73265
Inventor 李金明
Owner DONGGUAN WANFENG NANOMETER MATERIALS